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PDF AOL1708 Data sheet ( Hoja de datos )
| Número de pieza | AOL1708 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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AOL1708
N-Channel Enhancement Mode Field Effect Transistor
SRFET TM
General Description
Features
The AOL1708 uses advanced trench technology with a
monolithically integrated Schottky diode to provide excellent
RDS(ON),and low gate charge. This device is suitable for use
as a low side FET in SMPS, load switching and general
purpose applications.
-RoHS Compliant
-Halogen and Antimony Free Green Device*
VDS (V) = 30V
ID =70A
(VGS = 10V)
RDS(ON) < 5.9mΩ (VGS = 10V)
RDS(ON) < 9.5mΩ (VGS = 4.5V)
UIS Tested
Rg,Ciss,Coss,Crss Tested
Ultra SO-8TM Top View
S
G
D
Bottom tab
connected to
drain
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C G
Current B
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain TA=25°C
CurrentA
TA=70°C
Avalanche Current C
Repetitive avalanche energy L=0.3mH C
IDSM
IAR
EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
D
SRFET TM
Soft Recovery MOSFET:
Integrated Schottky Diode
S
Maximum
30
±20
70
60
180
15
12.0
25
94
71
36
2.1
1.3
-55 to 175
Units
V
V
A
A
A
A
mJ
W
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case D
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
20
50
1.5
Max
25
60
2.1
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
1 page  
AOL1708
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120 75
90
TA=25°C
60
TA=150°C
30
60
45
30
15
0
0.000001
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
0
0
25 50 75 100 125 150
TCASE (°C)
Figure 13: Power De-rating (Note B)
175
80
60
40
20
0
0 25 50 75 100 125 150 175
TCASE (°C)
Figure 14: Current De-rating (Note B)
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
100
80
TJ(Max)=150°C
TA=25°C
60
40
20
0
0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
0.1
0.01
0.001
0.00001
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=60°C/W
PD
Ton
T
0.0001
0.001
0.01
0.1
1
10 100
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
1000
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet AOL1708.PDF ] | |
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