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PDF AO4726 Data sheet ( Hoja de datos )
| Número de pieza | AO4726 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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AO4726
30V N-Channel MOSFET
SRFET TM
General Description
SRFETTM The AO4726 uses advanced trench
technology with a monolithically integrated Schottky
diode to provide excellent RDS(ON) and low gate charge.
This device is suitable for use as a low side FET in
SMPS, load switching and general purpose
applications.
Product Summary
VDS (V) = 30V
ID =20A (VGS = 10V)
RDS(ON) < 4.5mΩ (VGS = 10V)
RDS(ON) < 5.5mΩ (VGS = 4.5V)
100% UIS Tested
100% Rg Tested
Top View
D
D
D
D
SOIC-8
Bottom View
D
G
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current AF
TA=70°C
Pulsed Drain Current B
Avalanche Current B
Repetitive avalanche energy L=0.3mH B
IDSM
IDM
IAR
EAR
Power Dissipation
TA=25°C
TA=70°C
PDSM
Junction and Storage Temperature Range TJ, TSTG
G
S
Maximum
30
±12
20
16
105
30
45
3.1
2.0
-55 to 150
SRFETTM
Soft Recovery MOSFET:
Integrated Schottky Diode
Units
V
A
mJ
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Symbol
t ≤ 10s
Steady-State
RθJA
Steady-State
RθJL
Typ
32
60
17
Max
40
75
24
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
1 page  
AO4726
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.0E-01
1.0E-02
1.0E-03
1.0E-04
VDS=30V
VDS=15V
1.0E-05
1.0E-06
0
50 100 150 200
Temperature (°C)
Figure 12: Diode Reverse Leakage Current vs.
Junction Temperature
20
di/dt=800A/µs
18
125ºC
12
10
16
25ºC
8
14 Qrr
6
12 Irm
10
125ºC
25ºC
4
2
0 5 10 15 20 25 30
IS (A)
Figure 14: Diode Reverse Recovery Charge and Peak
Current vs. Conduction Current
0.8
10A 5A
0.7 20A
0.6
0.5
0.4
0.3
IS=1A
0.2
0.1
0
0 50 100 150 200
Temperature (°C)
Figure 13: Diode Forward voltage vs. Junction
Temperature
14
di/dt=800A/µs
12
10
8 trr
6
4S
2
125ºC
25ºC
125ºC
25ºC
4
3.5
3
2.5
2
1.5
1
0.5
00
0 5 10 15 20 25 30
IS (A)
Figure 15: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
20
Is=20A
125ºC
15
10 Qrr
25ºC
20
15
10
5
125ºC
5
Irm
0
25ºC
0
0 200 400 600 800 1000
di/dt (A/µs)
Figure 16: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
21 5
18
15 trr
125ºC
12
25ºC
9
25ºC
6
3S
0
125ºC
Is=20A
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
0 200 400 600 800 1000
di/dt (A/µs)
Figure 17: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet AO4726.PDF ] | |
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