|
|
Número de pieza | STW36NM60N | |
Descripción | N-channel Power MOSFET | |
Fabricantes | STMicroelectronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de STW36NM60N (archivo pdf) en la parte inferior de esta página. Total 13 Páginas | ||
No Preview Available ! STW36NM60N
N-channel 600 V, 0.092 Ω, 29 A, MDmesh™ II Power MOSFET
in TO-247
Features
Order code
STW36NM60N
VDSS @
TJmax
650 V
RDS(on)
max
< 0.105 Ω
ID
29 A
PW
210 W
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
■ Switching applications
– Automotive
Description
This device is made using the second generation
of MDmesh™ technology. This revolutionary
Power MOSFET associates a new vertical
structure to the company’s strip layout to yield one
of the world’s lowest on-resistance and gate
charge. It is therefore suitable for the most
demanding high efficiency converters.
3
2
1
TO-247
Figure 1. Internal schematic diagram
$
'
Table 1. Device summary
Order code
STW36NM60N
Marking
36NM60N
3
!-V
Package
TO-247
Packaging
Tape and reel
June 2011
Doc ID 018963 Rev 1
1/13
www.st.com
13
1 page STW36NM60N
Table 6. Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Electrical characteristics
Test conditions
VDD = 300 V, ID = 14.5 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 14)
Min. Typ. Max Unit
17 ns
34 ns
--
106 ns
67 ns
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min Typ. Max Unit
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 29 A, VGS = 0
29 A
-
116 A
- 1.6 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
408
ISD = 29 A, di/dt = 100 A/µs -
8
VDD= 60 V (see Figure 19)
39
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 29 A, di/dt = 100 A/µs
480
VDD= 60 V Tj = 150 °C
- 10
(see Figure 19)
42
ns
µC
A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Doc ID 018963 Rev 1
5/13
5 Page STW36NM60N
Figure 20. TO-247 drawing
Package mechanical data
0075325_F
Doc ID 018963 Rev 1
11/13
11 Page |
Páginas | Total 13 Páginas | |
PDF Descargar | [ Datasheet STW36NM60N.PDF ] |
Número de pieza | Descripción | Fabricantes |
STW36NM60N | N-channel Power MOSFET | STMicroelectronics |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |