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Número de pieza | STL23NM50N | |
Descripción | N-channel Power MOSFET | |
Fabricantes | STMicroelectronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de STL23NM50N (archivo pdf) en la parte inferior de esta página. Total 13 Páginas | ||
No Preview Available ! STL23NM50N
N-channel 500 V, 0.170 Ω typ., 14 A MDmesh™ II Power MOSFET
in a PowerFLAT™ 8x8 HV package
Datasheet — production data
Features
Type
STL23NM50N
VDSS @
TJmax
550 V
RDS(on)
max
< 0.210 Ω
ID
14 A (1)
1. The value is rated according to Rthj-case
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Applications
■ Switching applications
Description
This device is an N-channel Power MOSFET
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
3
3
3
'
"OTTOM VIEW
$
0OWER&,!4 X (6
Figure 1. Internal schematic diagram
$
'
3
!-V
Table 1. Device summary
Order code
STL23NM50N
Marking
23NM50N
Package
PowerFLAT™ 8x8 HV
Packaging
Tape and reel
October 2012
This is information on a product in full production.
Doc ID 022339 Rev 2
1/13
www.st.com
13
1 page STL23NM50N
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min Typ. Max Unit
ISD Source-drain current
ISDM (1) Source-drain current (pulsed)
17 A
-
68 A
VSD (2) Forward on voltage
ISD = 17 A, VGS = 0
- 1.5 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 17 A, di/dt = 100 A/µs
286
VDD = 60 V
- 3700
(see Figure 18)
26
ns
nC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 17 A, di/dt = 100 A/µs
350
VDD = 60 V, Tj = 150 °C
- 4800
(see Figure 18)
27
ns
nC
A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Doc ID 022339 Rev 2
5/13
5 Page STL23NM50N
Package mechanical data
Figure 20. PowerFLAT™ 8x8 HV recommended footprint
7.30
2.00 1.05
Footprint
Doc ID 022339 Rev 2
11/13
11 Page |
Páginas | Total 13 Páginas | |
PDF Descargar | [ Datasheet STL23NM50N.PDF ] |
Número de pieza | Descripción | Fabricantes |
STL23NM50N | N-channel Power MOSFET | STMicroelectronics |
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