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PDF NTR4171P Data sheet ( Hoja de datos )
| Número de pieza | NTR4171P | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NTR4171P
Power MOSFET
−30 V, −3.5 A, Single P−Channel, SOT−23
Features
• Low RDS(on) at Low Gate Voltage
• Low Threshold Voltage
• High Power and Current Handling Capability
• This is a Pb−Free Device
Applications
• Load Switch
• Optimized for Battery and Load Management Applications in
Portable Equipment like Cell Phones, PDA’s, Media Players, etc.
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Steady
State
Power Dissipation
(Note 1)
t≤5s
Steady
State
t≤5s
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
VDSS
VGS
ID
PD
−30
±12
−2.2
−1.5
−3.5
0.48
1.25
V
V
A
W
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
IDM −15.0 A
TJ,
Tstg
−55 to
150
°C
IS −1.0 A
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
Junction−to−Ambient − Steady State (Note 1)
RqJA
260 °C/W
Junction−to−Ambient − t ≤ 10 s (Note 1)
RqJA
100
1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces)
http://onsemi.com
V(BR)DSS
−30 V
RDS(on) MAX
75 mW @ −10 V
110 mW @ −4.5 V
150 mW @ −2.5 V
ID MAX
−2.2 A
−1.8 A
−1.0 A
P−CHANNEL MOSFET
S
G
D
3
1
2
SOT−23
CASE 318
STYLE 21
MARKING DIAGRAM/
PIN ASSIGNMENT
3
Drain
TRFMG
G
1
Gate
2
Source
TRF = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NTR4171PT1G
Package
SOT−23
(Pb−Free)
Shipping†
3000/Tape & Reel
NTR4171PT3G SOT−23 10000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2010
May, 2010 − Rev. 1
1
Publication Order Number:
NTR4171P/D
1 page  
1.0
Duty Cycle = 0.5
NTR4171P
TYPICAL CHARACTERISTICS
100
VGS = −12 V
Single Pulse
10 TC = 25°C
10 ms
100 ms
1.0 1 ms
10 ms
0.1
0.01
0.1
RDS(on) Limit
Thermal Limit
Package Limit
1.0
10
dc
100
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 13. Maximum Rated Forward Biased
Safe Operating Area
0.2
0.1
0.1
0.05
0.02
0.01
0.01
0.0001
Single Pulse
0.001
0.01 0.1
1.0
t, TIME (s)
Figure 14. FET Thermal Response
10
100 1000
http://onsemi.com
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet NTR4171P.PDF ] | |
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