(PDF) LP2307LT1G Datasheet - 16V P-Channel Enhancement-Mode MOSFET

Número de pieza	LP2307LT1G
Descripción	16V P-Channel Enhancement-Mode MOSFET
Fabricantes	LRC
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Hay una vista previa y un enlace de descarga de LP2307LT1G (archivo pdf) en la parte inferior de esta página. Total 4 Páginas
No Preview Available ! LESHAN RADIO COMPANY, LTD. 16V P-Channel Enhancement-Mode MOSFET VDS= -16V RDS(ON), [email protected], [email protected] = 60 mΩ RDS(ON), [email protected], [email protected] = 100 mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance ▼ Simple Drive Requirement ▼ Small Package Outline ▼ Surface Mount Device LP2307LT1G 3 1 2 SOT– 23 (TO–236AB) D G S ORDERING INFORMATION Device Marking Shipping LP2307LT1G P07 3000/Tape&Reel LP2307LT3G P07 10000/Tape&Reel Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ PD@T A=70℃ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Total Power Dissipation TSTG TJ Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient3 Rating -16 ±8 -4.7 -3.3 -20 1.1 0.7 -55 to 150 -55 to 150 Units V V A A A W W ℃ ℃ Value 110 Unit ℃/W 1/4 1 page

Páginas	Total 4 Páginas
PDF Descargar	[ Datasheet LP2307LT1G.PDF ]

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PDF LP2307LT1G Data sheet ( Hoja de datos )