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Número de pieza | LN9926LT1G | |
Descripción | Dual N-Channel Enhancement-Mode MOSFET | |
Fabricantes | LRC | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de LN9926LT1G (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
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LN9926LT1GDual N-Channel Enhancement-Mode MOSFET (20V, 6A)
Description
This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced
trench process. It has been optimized for power management applications with a
wide range of gate drive voltage (2.5V-10V)
Features
• RDS(on)=40mΩ@VGS=2.5V, ID=5.2A; RDS(on)=30mΩ@VGS=4.5V, ID=6A
• High Density Cell Design for Ultra Low On-Resistance
• High Power and Current Handing Capability
• Fully Characterized Avalanche Voltage and Current
• Ideal for Li ion Battery Pack Applications
• We declare that the material of product compliance with
RoHS requirements.
1
2
3
TSOP-6
6
5
4
4
Q2
5
6
Q1
3
Pin 1: Source 1
Pin 2: Drania 1 & 2
2 Pin 3: Source 2
Pin 4: Gate 2
1 Pin 5: Drania 1 & 2
Pin 6: Gate 1
Marking:
Applications
• Battery Protection
• Load Switch
• Power Management
9 2 6C
Pb Free Mark
Pb-Free: " "(Note)
Normal: None
Pin Style: 1.Source1 2.Drain1&2 3.Source2
4.Gate2 5.Drain1&2 6.Gate1
Material:
• Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
• Mold Compound: Epoxy resin family,
Absolute Maximum Ratings (TA=25oC, unless otherwise noted)
Symbol
Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current (Continuous)
IDM Drain Current (Pulsed) *1
Total Power Dissipation @TA=25oC
PD Total Power Dissipation @TA=75oC
Tj, Tstg
RθJA
Operating and Storage Temperature Range
Thermal Resistance Junction to Ambient*2
*1: Maximum DC current limited by the package
*2: 1-in2 2oz Cu PCB board
Ratings
20
±12
6
30
2
1.3
-55 to +150
62.5
Units
V
V
A
A
W
W
°C
°C/W
1/5
1 page LESHAN RADIO COMPANY, LTD.
LN9926LT1G
TSOP-6
A
B
B1 B1
654
CD
123
F F2
F1
E
G
H
J
K1
K
DIM Min. Max.
A 2.70 5.10
B *1.90
-
B1 *0.95
-
C 2.60 3.00
D 1.40 1.80
E 0.30 0.50
F - 1.10
F1 0 0.10
F2 0.70 1.00
G *0.25
-
H *0.45
-
J *0.12 -
K *0.60
-
K1 0o 10o
*: REF., Unit: mm
5/5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet LN9926LT1G.PDF ] |
Número de pieza | Descripción | Fabricantes |
LN9926LT1G | Dual N-Channel Enhancement-Mode MOSFET | LRC |
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