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PDF SSF7510 Data sheet ( Hoja de datos )

Número de pieza SSF7510
Descripción MOSFET ( Transistor )
Fabricantes Silikron 
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No Preview Available ! SSF7510 Hoja de datos, Descripción, Manual

SSF7510
Feathers:
„ Advanced trench process technology
„ Special designed for Convertors and power controls
„ High density cell design for ultra low Rdson
„ Fully characterized Avalanche voltage and current
„ Avalanche Energy 100% test
Description:
The SSF7510 is a new generation of middle voltage and
high current N–Channel enhancement mode trench power
MOSFET. This new technology increases the cell density
and reduces the on-resistance; its typical Rdson can reduce
to 6.8mohm.
Application:
„ Power switching application
ID=75A
BV=75V
Rdson=7m(Typ.)
Absolute Maximum Ratings
Parameter
ID@Tc=25 ْC
Continuous drain current,VGS@10V
ID@Tc=100ْC
IDM
Continuous drain current,VGS@10V
Pulsed drain current
PD@TC=25ْC
Power dissipation
Linear derating factor
VGS
dv/dt
Gate-to-Source voltage
Peak diode recovery voltage
EAS Single pulse avalanche energy
EAR
TJ
TSTG
Repetitive avalanche energy
Operating Junction and
Storage Temperature Range
SSF7510 TOP View (TO220)
Max.
75
70
300
150
2.0
±20
31
480
TBD
–55 to +150
Units
A
W
W/ ْC
V
v/ns
mJ
ْC
Thermal Resistance
Parameter
Min. Typ. Max.
Units
RθJC
Junction-to-case
— 0.83
RθJA Junction-to-ambient
62
Electrical Characteristics @TJ=25 ْC(unless otherwise specified)
ْC/W
Parameter
Min. Typ. Max. Units
Test Conditions
BVDSS
RDS(on)
VGS(th)
gfs
IDSS
Drain-to-Source breakdown voltage 75 —
Static Drain-to-Source on-resistance — 7
Gate threshold voltage
2.0 3.2
Forward transconductance
- 58
——
Drain-to-Source leakage current
——
IGSS Gate-to-Source forward leakage
©Silikron Semiconductor CO.,LTD.
2008.8.1
——
—V
VGS=0V,ID=250μA
10 m
VGS=10V,ID=40A
4.0 V
VDS=VGS,ID=250μA
—S
VDS=5V,ID=30A
1 VDS=75V,VGS=0V
μA
10
VDS=75V,
VGS=0V,TJ=150ْC
100 nA VGS=20V
Version : 1.0
page 1of5

1 page




SSF7510 pdf
TO220 MECHANICAL DATA:
SSF7510
©Silikron Semiconductor CO.,LTD.
2008.8.1
Version : 1.0
page 5of5

5 Page










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