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PDF Si4420DY Data sheet ( Hoja de datos )
| Número de pieza | Si4420DY | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de Si4420DY (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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PD - 93835
Si4420DY
l N-Channel MOSFET
l Low On-Resistance
l Low Gate Charge
l Surface Mount
l Logic Level Drive
S
S
S
G
Description
This N-channel HEXFET® power MOSFET is produced
using International Rectifier's advanced HEXFET power
MOSFET technology. The low on-resistance and low gate
charge inherent to this technology make this device ideal
for low voltage or battery driven power conversion
applications
The SO-8 package with copper leadframe offers enhanced
thermal characteristics that allow power dissipation of
greater that 800mW in typical board mount applications.
HEXFET® Power MOSFET
AA
1 8D
2 7D
3 6D
4 5D
Top View
VDSS = 30V
RDS(on) = 0.009Ω
SO-8
Absolute Maximum Ratings
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
EAS
VGS
TJ, TSTG
Parameter
Drain- Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
RθJA
www.irf.com
Parameter
Maximum Junction-to-Ambient
Max.
30
±12.5
±10
±50
2.5
1.6
0.02
400
± 20
-55 to + 150
Max.
50
Units
V
A
W
W/°C
mJ
V
°C
Units
°C/W
1
1/3/2000
1 page  
14
12
10
8
6
4
2
0
25
50 75 100 125
TC , Case Temperature ( °C)
150
Fig 9. Maximum Drain Current Vs.
Case Temperature
Si4420DY
100
80
60
40
20
0
0.01
0.1
1
A
10 100
Tim e (sec)
Fig 10. Typical Power Vs. Time
100
D = 0.50
10 0.20
0.10
0.05
0.02
1
0.01
0.1
0.01
0.0001
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
100
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet Si4420DY.PDF ] | |
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