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PDF MT2501 Data sheet ( Hoja de datos )

Número de pieza MT2501
Descripción P-Channel Enhancement Mode MOSFET
Fabricantes Matrix Microtech　
Logotipo Matrix Microtech Logotipo



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No Preview Available ! MT2501 Hoja de datos, Descripción, Manual

‹ DESCRIPTION
MT2501
P- Channel Enhancement Mode MOSFET
The MT2501 is the P-Channel logic enhancement mode power field effect transistor are produced using
high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook
computer power management and other Battery powered circuits, and low in-line power loss are needed in a
very small outline surface mount package.
‹ FEATURES
¾ -100V/-10A, RDS(ON) =205mΩ @ VGS = -10V
¾ -100V/-10A, RDS(ON) =225mΩ @ VGS = -7V
¾ Super high density cell design for extremely
ultra low RDS(ON)
¾ Exceptional on-resistance and maximum DC
current capability
¾ TO-252 package design
‹ PIN CONFIGURATION
TO-252(Top Site)
D
‹ APPLICATIONS
¾ POWER Management
¾ Portable Equipment
¾ DC/DC Converter
¾ Load Switch
¾ DSC
Drain
123
G DS
Gate
Source
-1-
www.matrix-microtech.com.tw
Ver 1.00 10/21/2009

1 page




MT2501 pdf
‹ TYPICAL CHARACTERICTICS
(25℃ Unless Noted)
MT2501
P- Channel Enhancement Mode MOSFET
-5-
www.matrix-microtech.com.tw
Ver 1.00 10/21/2009

5 Page










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