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Número de pieza STTH1002C-Y
Descripción Automotive high efficiency ultrafast diode
Fabricantes STMicroelectronics 
Logotipo STMicroelectronics Logotipo



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STTH1002C-Y
Automotive high efficiency ultrafast diode
Features
Suited for SMPS
Low losses
Low forward and reverse recovery times
High junction temperature
Low leakage current
AEC-Q101 qualified
Description
Dual center tap rectifier suited for switch mode
power supplies and high frequency DC to DC
converters.
Packaged in DPAK and D2PAK, this device is
intended for use in low voltage, high frequency
inverters, free wheeling and polarity protection for
automotive applications.
A1
A2
K
K A2
A1
DPAK
STTH1002CBY
K
K
K A2
A1
D2PAK
STTH1002CGY
Table 1. Device summary
Symbol
Value
IF(AV)
VRRM
Tj (max)
VF(typ)
trr (typ)
Up to 2 x 8 A
200 V
175 °C
0.78 V
20 ns
November 2011
Doc ID 17536 Rev 2
1/9
www.st.com
9

1 page




STTH1002C-Y pdf
STTH1002C-Y
Characteristics
Figure 7.
trr(ns)
80
IF=5A
VR=160V
70
60
50
40
30
20
10
0
10
Reverse recovery time versus dIF/dt Figure 8.
(typical values, per diode)
Tj=125°C
Tj=25°C
dIF/dt(A/µs)
100
1000
IRM(A)
13
12
IF=5A
VR=160V
11
10
9
8
7
6
5
4
3
2
1
0
10
Peak reverse recovery current
versus dIF/dt
(typical values, per diode)
Tj=125°C
dIF/dt(A/µs)
100
Tj=25°C
1000
Figure 9. Dynamic parameters versus
junction temperature
Qrr;IRM[Tj]/Qrr;IRM[Tj=125°C]
1.4
IF=5A
VR=160V
1.2
1.0
IRM
0.8
Qrr
0.6
0.4
0.2
Tj(°C)
0.0
25 50 75 100
125
Figure 10. Thermal resistance junction to
ambient versus copper surface
under tab for D2PAK
Rth(j-a)(°C/W)
80
Epoxy printed circuit board FR4, copper thickness = 35 µm
70
60
50
40
30
20
10
S(Cu)(cm²)
0
150 0 2 4 6 8 10 12 14 16 18 20
Figure 11.
Thermal resistance junction to ambient versus copper surface under tab (Epoxy
printed circuit board FR4, copper thickness = 35 µm) for DPAK
Rth(j-a)(°C/W)
100
90
80
70
60
50
40
30
20
10 S(Cu)(cm²)
0
0 2 4 6 8 10 12 14 16 18 20
Doc ID 17536 Rev 2
5/9

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