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PDF IXFL60N60 Data sheet ( Hoja de datos )
| Número de pieza | IXFL60N60 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | IXYS Corporation | |
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HiPerFETTM Power MOSFETs
ISOPLUS264TM
IXFL 60N60
(Electrically Isolated Backside)
Single Die MOSFET
VDSS
ID25
RDS(on)
= 600 V
= 60 A
= 80 mΩ
Preliminary Data Sheet
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
FC
TJ
TJM
Tstg
VISOL
Md
Weight
Symbol
VDSS
VGH(th)
IGSS
IDSS
RDS(on)
Test Conditions
TJ= 25°C to 150°C
TJ= 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
TC= 25°C, Chip capability
TC= 25°C, pulse width limited by TJM
TC= 25°C
TC= 25°C
TC= 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 2 Ω
TC= 25°C
Mouting Force
Maximum Ratings
600 V
600 V
±20 V
±30 V
60 A
240 A
60 A
64 mJ
4J
5 V/ns
700
30...150/7...33
-55 ... +150
150
-55 ... +150
W
N/lb
°C
°C
°C
50/60 Hz, RMS t = 1 min
IISOL ≤ 1 mA
t=1s
Mounting torque
Terminal connection torque
2500
3000
V~
V~
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
8g
Test Conditions
VGS = 0 V, ID = 3 mA
VDS = VGS, ID = 8 mA
VGS = ±20 VDC, VDS = 0
VDS = VDSS
VGS = 0 V
VGS = 10 V, ID = IT
Notes 1, 2
Characteristic Values
(TJ
=
25°C,
unless otherwise specified)
min. typ. max.
600
2.0
TJ = 25°C
TJ = 125°C
V
4.0 V
±200 nA
100 µA
2 mA
80 mΩ
ISOPLUS-264TM
G
DS
(Backside)
G = Gate
D = Drain
S = Source
Features
z Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
z Low drain to tab capacitance(<30pF)
z Low RDS (on) HDMOSTM process
z Rugged polysilicon gate cell structure
z Unclamped Inductive Switching (UIS)
rated
z Fast intrinsic Rectifier
Applications
z DC-DC converters
z Battery chargers
z Switched-mode and resonant-mode
power supplies
z DC choppers
z AC motor control
Advantages
z Easy assembly
z Space savings
z High power density
© 2003 IXYS All rights reserved
DS99093(10/03)
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet IXFL60N60.PDF ] | |
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