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PDF AUIRFSL4410Z Data sheet ( Hoja de datos )

Número de pieza AUIRFSL4410Z
Descripción HEXFET Power MOSFET
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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No Preview Available ! AUIRFSL4410Z Hoja de datos, Descripción, Manual

AUTOMOTIVE GRADE
PD - 96405A
AUIRFS4410Z
Features
AUIRFSL4410Z
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
Description
HEXFET® Power MOSFET
D VDSS
RDS(on) typ.
100V
7.2mΩ
G max. 9.0mΩ
S ID
97A
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating . These features
combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a
wide variety of other applications.
D
D
DS
G
D2Pak
AUIRFS4410Z
DS
G
TO-262
AUIRFSL4410Z
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications
is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal
resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA)
is 25°C, unless otherwise specified.
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
VGS
dv/dt
EAS (Thermally limited)
IAR
EAR
TJ
TSTG
Gate-to-Source Voltage
ePeak Diode Recovery
dSingle Pulse Avalanche Energy
Avalanche Current
fRepetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Thermal Resistance
Parameter
jRθJC
Junction-to-Case
iRθJA Junction-to-Ambient (PCB Mount) , D2Pak
Max.
97
69
390
230
1.5
± 20
16
242
See Fig. 14, 15, 22a, 22b,
-55 to + 175
300
Typ.
–––
–––
Max.
0.65
40
Units
A
W
W/°C
V
V/ns
mJ
A
mJ
°C
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
10/4/11

1 page




AUIRFSL4410Z pdf
1000
100 TJ = 175°C
10
TJ = 25°C
1
VGS = 0V
0.1
0.0 0.5 1.0 1.5 2.0 2.5
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
100
80
60
40
20
0
25 50 75 100 125 150
TC , Case Temperature (°C)
Fig 9. Maximum Drain Current vs.
Case Temperature
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-10 0 10 20 30 40 50 60 70 80 90 100
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical COSS Stored Energy
www.irf.com
1000
100
AUIRFS/SL4410Z
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100μsec
1msec
10msec
DC
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
01
10 100
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
125
Id = 5mA
120
115
110
105
100
95
90
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Temperature ( °C )
Fig 10. Drain-to-Source Breakdown Voltage
1000
900
800
700
ID
TOP 6.4A
9.4A
BOTTOM 58A
600
500
400
300
200
100
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
5

5 Page





AUIRFSL4410Z arduino
D2Pak (TO-263AB) Tape & Reel Information
Dimensions are shown in millimeters (inches)
AUIRFS/SL4410Z
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
TRL
10.90 (.429)
10.70 (.421)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
16.10 (.634)
15.90 (.626)
0.368 (.0145)
0.342 (.0135)
24.30 (.957)
23.90 (.941)
4.72 (.136)
4.52 (.178)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
www.irf.com
11

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