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PDF ESD7371P2T5G Data sheet ( Hoja de datos )
| Número de pieza | ESD7371P2T5G | |
| Descripción | Ultra-Low Capacitance ESD Protection | |
| Fabricantes | ON Semiconductor | |
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ESD7371,
SZESD7371 Series
Ultra-Low Capacitance ESD
Protection
The ESD7371 Series is designed to protect voltage sensitive
components that require ultra−low capacitance from ESD and
transient voltage events. Excellent clamping capability, low
capacitance, high breakdown voltage, high linearity, low leakage, and
fast response time make these parts ideal for ESD protection on
designs where board space is at a premium. It has industry leading
capacitance linearity over voltage making it ideal for RF applications.
This capacitance linearity combined with the extremely small package
and low insertion loss makes this part well suited for use in antenna
line applications for wireless handsets and terminals.
Features
• Industry Leading Capacitance Linearity Over Voltage
• Low Capacitance (0.7 pF Max, I/O to GND)
• Stand−off Voltage: 5.3 V
• Low Leakage: < 1 nA
• Low Dynamic Resistance < 1 W
• IEC61000−4−2 Level 4 ESD Protection
• 1000 ESD IEC61000−4−2 Strikes ±8 kV Contact / Air Discharged
• SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
• RF Signal ESD Protection
• RF Switching, PA, and Antenna ESD Protection
• Near Field Communications
• USB 2.0, USB 3.0
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol Value Unit
2
1
http://onsemi.com
MARKING
DIAGRAMS
SOD−323
CASE 477
AG
M
2
1
SOD−523
CASE 502
AG
12
SOD−923
CASE 514AB
AE M
X, XX = Specific Device Code
M = Date Code
PIN CONFIGURATION
AND SCHEMATIC
1
Cathode
2
Anode
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
IEC 61000−4−2 (ESD) (Note 1)
20 kV
IEC 61000−4−5 (ESD) (Note 2)
3.0 A
Total Power Dissipation (Note 3) @ TA = 25°C
Thermal Resistance, Junction−to−Ambient
°PD°
RqJA
300 mW
400 °C/W
Junction and Storage Temperature Range
TJ, Tstg −55 to
+150
°C
Lead Solder Temperature − Maximum
(10 Second Duration)
TL 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Non−repetitive current pulse at TA = 25°C, per IEC61000−4−2 waveform.
2. Non−repetitive current pulse at TA = 25°C, per IEC61000−4−5 waveform.
3. Mounted with recommended minimum pad size, DC board FR−4
See Application Note AND8308/D for further description of survivability specs.
© Semiconductor Components Industries, LLC, 2014
September, 2014 − Rev. 1
1
Publication Order Number:
ESD7371/D
1 page  
ESD7371, SZESD7371 Series
Figure 10. Comparison Between 8 kV IEC 61000−4−2 and 8 A and 16 A TLP Waveforms
ORDERING INFORMATION
Device
Package
Shipping†
ESD7371HT1G,
SZESD7371HT1G*
SOD−323
(Pb−Free)
3000 / Tape & Reel
ESD7371XV2T1G,
SZESD7371XV2T1G*
SOD−523
(Pb−Free)
3000 / Tape & Reel
ESD7371P2T5G,
SZESD7371P2T5G*
SOD−923
(Pb−Free)
8000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.
http://onsemi.com
5
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