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PDF ESD7421 Data sheet ( Hoja de datos )

Número de pieza ESD7421
Descripción ESD Protection Diodes
Fabricantes ON Semiconductor 
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ESD7421, SZESD7421
ESD Protection Diodes
Micro−Packaged Diodes for ESD Protection
The ESD7421 is designed to protect voltage sensitive components
from ESD. Excellent clamping capability, low leakage, and fast
response time provide best in class protection on designs that are
exposed to ESD. Because of its small size, it is suited for use in cellular
phones, automotive sensors, infotainment, MP3 players, digital
cameras and many other applications where board space comes at a
premium.
Specification Features
Low Capacitance 0.3 pF
Low Clamping Voltage
Low Leakage 100 nA
Response Time is < 1 ns
IEC61000−4−2 Level 4 ESD Protection
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
IEC 61000−4−2 (ESD)
Contact
Air
±12 kV
±15
Total Power Dissipation on FR−5 Board
(Note 1) @ TA = 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature Range
Lead Solder Temperature − Maximum
(10 Second Duration)
°PD°
RqJA
TJ, Tstg
TL
300 mW
400 °C/W
−55 to +150 °C
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.62 in.
http://onsemi.com
Pin 1
Pin 2
MARKING
DIAGRAM
XDFN2
(SOD−882)
CASE 711AM
5M
G
5 = Specific Device Code
M = Date Code
G = Pb−Free Package
ORDERING INFORMATION
Device
ESD7421N2T5G
Package
XDFN2
(Pb−Free)
Shipping
8000 /
Tape & Reel
SZESD7421N2T5G XDFN2
(Pb−Free)
8000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
See Application Note AND8308/D for further description of survivability specs.
© Semiconductor Components Industries, LLC, 2014
July, 2014 − Rev. 1
1
Publication Order Number:
ESD7421/D

1 page




ESD7421 pdf
ESD7421, SZESD7421
20 −20
18 −18
16 −16
14 −14
12 −12
10 −10
8 −8
6 −6
4 −4
2
0
0 5 10 15 20 25 30 35 40 45
−2
0
0 −5 −10 −15 −20 −25 −30
VOLTAGE (V)
VOLTAGE (V)
Figure 6. Positive TLP IV Curve
Figure 7. Negative TLP IV Curve
NOTE: TLP parameter: Z0 = 50 W, tp = 100 ns, tr = 300 ps, averaging window: t1 = 30 ns to t2 = 60 ns.
−35
Transmission Line Pulse (TLP) Measurement
Transmission Line Pulse (TLP) provides current versus
voltage (I−V) curves in which each data point is obtained
from a 100 ns long rectangular pulse from a charged
transmission line. A simplified schematic of a typical TLP
system is shown in Figure 8. TLP I−V curves of ESD
protection devices accurately demonstrate the product’s
ESD capability because the 10s of amps current levels and
under 100 ns time scale match those of an ESD event. This
is illustrated in Figure 9 where an 8 kV IEC 61000−4−2
current waveform is compared with TLP current pulses at
8 A and 16 A. A TLP I−V curve shows the voltage at which
the device turns on as well as how well the device clamps
voltage over a range of current levels.
L
50 W Coax
Cable
S Attenuator
÷
50 W Coax
Cable
10 MW
IM VM
VC DUT
Oscilloscope
Figure 8. Simplified Schematic of a Typical TLP
System
Figure 9. Comparison Between 8 kV IEC 61000−4−2 and 8 A and 16 A TLP Waveforms
http://onsemi.com
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