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PDF STW60NM50N Data sheet ( Hoja de datos )

Número de pieza STW60NM50N
Descripción N-CHANNEL MOSFET
Fabricantes STMicroelectronics 
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No Preview Available ! STW60NM50N Hoja de datos, Descripción, Manual

STW60NM50N
N-channel 500 V, 0.035 Ω, 68 A, MDmesh™ II Power MOSFET
in a TO-247 package
Datasheet - production data
Features
3
2
1
TO-247
Order code VDSS (@Tjmax) RDS(on) max ID
STW60NM50N
550 V
<0.043 Ω 68 A
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Applications
Switching applications
Figure 1. Internal schematic diagram
' 
* 
Description
This device is an N-channel Power MOSFET
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
6 
$0Y
Order codes
STW60NM50N
Table 1. Device summary
Marking
Packages
60NM50N
TO-247
Packaging
Tube
April 2013
This is information on a product in full production.
DocID023157 Rev 2
1/13
www.st.com
13

1 page




STW60NM50N pdf
STW60NM50N
Electrical characteristics
Table 7. Switching times
Symbol
Parameter
Test conditions
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD =300 V, ID = 32.5 A
RG = 4.7 Ω VGS = 10 V
(see Figure 13)
Min. Typ. Max. Unit
- 206 -
- 36 -
- 40 -
- 27.5 -
ns
ns
ns
ns
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ISD Source-drain current
Source-drain current (pulsed)
ISDM (1)
VSD (2)
Source-drain current (pulsed)
Forward on voltage
ISD = 68 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 68 A, di/dt = 100 A/µs
VDD = 100 V
(see Figure 15)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 68 A, di/dt = 100 A/µs
VDD = 100 V, Tj = 150 °C
(see Figure 15)
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
-
-
-
-
-
-
-
-
-
68 A
272
1.6
476
10.5
44
586
15
51
A
V
ns
nC
A
ns
nC
A
DocID023157 Rev 2
5/13

5 Page





STW60NM50N arduino
STW60NM50N
Package mechanical data
Figure 19. TO-247 drawing
0075325_G
DocID023157 Rev 2
11/13

11 Page







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