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PDF STW47NM60ND Data sheet ( Hoja de datos )
| Número de pieza | STW47NM60ND | |
| Descripción | N-CHANNEL MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STW47NM60ND
Automotive-grade N-channel 600 V, 0.075 Ω typ., 35 A FDmesh™ II
Power MOSFET (with fast diode) in a TO-247 package
Datasheet - production data
Features
3
2
1
TO-247
Figure 1. Internal schematic diagram
Order code VDS @ TJMAX RDS(on) max ID
STW47NM60ND 650 V
0.088 Ω 35 A
• Designed for automotive applications and
AEC-Q101 qualified
• The worldwide best RDS(on)*area amongst the
fast recovery diode devices
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
• Extremely high dv/dt and avalanche
capabilities.
$ Applications
• Switching applications
'
3
!-V
Description
This device is an N-channel Power MOSFET
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
Order code
STW47NM60ND
Table 1. Device summary
Marking
Packages
47NM60ND
TO-247
Packaging
Tube
October 2013
This is information on a product in full production.
DocID18281 Rev 4
1/13
www.st.com
1 page  
STW47NM60ND
Electrical characteristics
Table 7. Switching times
Symbol
Parameter
Test conditions
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 300 V, ID = 17.5 A
RG = 4.7 Ω VGS = 10 V
(see Figure 14)
Min. Typ. Max. Unit
- 30 - ns
- 40 - ns
- 120 - ns
- 50 - ns
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min Typ. Max Unit
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 35 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 35 A, di/dt = 100 A/µs
VDD = 100 V
(see Figure 16)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 35 A, di/dt = 100 A/µs
VDD = 100 V, Tj = 150 °C
(see Figure 16)
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
-
-
-
-
35
140
1.3
190
1.6
17
280
3.0
22
A
A
V
ns
µC
A
ns
µC
A
DocID18281 Rev 4
5/13
13
5 Page 
STW47NM60ND
Package mechanical data
Figure 20. TO-247 drawing
0075325_G
DocID18281 Rev 4
11/13
13
11 Page | ||
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