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PDF STL65DN3LLH5 Data sheet ( Hoja de datos )

Número de pieza STL65DN3LLH5
Descripción Dual N-channel Power MOSFET
Fabricantes STMicroelectronics 
Logotipo STMicroelectronics Logotipo



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STL65DN3LLH5
Dual N-channel 30 V, 0.0059 Ω, 19 A
PowerFLAT™(5x6) double island, STripFET™ V Power MOSFET
Features
Type
STL65DN3LLH5
VDSS
30 V
RDS(on)
max
<0.0065 Ω
ID
19 A (1)
1. The value is rated according Rthj-pcb
RDS(on) * Qg industry benchmark
Extremely low on-resistance RDS(on)
Very low switching gate charge
High avalanche ruggedness
Low gate drive power losses
Application
Switching applications
Description
This product utilizes the 5th generation of design
rules of ST’s proprietary STripFET™ technology.
The lowest available RDS(on)*Qg, in this chip scale
package, makes this device suitable for the most
demanding DC-DC converter applications, where
high power density is to be achieved.
PowerFLAT™ (5x6)
Double island
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
Marking
STL65DN3LLH5
65DN3LLH5
Package
PowerFLAT™(5x6)
Double island
Packaging
Tape and reel
December 2010
Doc ID 18323 Rev 1
1/12
www.st.com
12

1 page




STL65DN3LLH5 pdf
STL65DN3LLH5
Table 7. Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Electrical characteristics
Test conditions
VDD=15 V, ID= 9.5 A,
RG=4.7 Ω, VGS=10 V
(see Figure 13)
Min. Typ. Max. Unit
8.8 ns
18 ns
--
26 ns
4 ns
Table 8. Source drain diode
Symbol
Parameter
Test conditions
ISD Source-drain current
ISDM(1) Source-drain current (pulsed)
VSD(2) Forward on voltage
ISD = 19 A, VGS=0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 19 A,
di/dt = 100 A/µs,
VDD=25 V, Tj=150 °C
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min. Typ. Max. Unit
- 19 A
- 76 A
- 1.1 V
24
- 12
1.8
ns
nC
A
Doc ID 18323 Rev 1
5/12

5 Page





STL65DN3LLH5 arduino
STL65DN3LLH5
5 Revision history
Table 10. Document revision history
Date
Revision
07-Dec-2010
1 First release
Revision history
Changes
Doc ID 18323 Rev 1
11/12

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