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PDF ATP114 Data sheet ( Hoja de datos )
| Número de pieza | ATP114 | |
| Descripción | P-Channel Power MOSFET | |
| Fabricantes | ON Semiconductor | |
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Ordering number : ENA1711A
ATP114
P-Channel Power MOSFET
–60V, –55A, 16mΩ, Single ATPAK
http://onsemi.com
Features
• ON-resistance RDS(on)1=12mΩ(typ.)
• 4V drive
• Protection diode in
• Input Capacitance Ciss=4000pF(typ.)
• Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (PW≤10μs)
Allowable Power Dissipation
Channel Temperature
VDSS
VGSS
ID
IDP
PD
Tch
Storage Temperature
Tstg
Avalanche Energy (Single Pulse) *1
EAS
Avalanche Current *2
IAV
Note :*1 VDD=--15V, L=200μH, IAV=--28A
*2 L≤100μH, Single pulse
Conditions
PW≤10μs, duty cycle≤1%
Tc=25°C
Ratings
--60
±20
--55
--165
60
150
--55 to +150
100
--28
Unit
V
V
A
A
W
°C
°C
mJ
A
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7057-001
6.5
4
1.5
0.4
ATP114-TL-H
4.6
2.6
0.4
Product & Package Information
• Package
: ATPAK
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TL
TL
Marking
ATP114
LOT No.
2
1
0.8
3
0.6
2.3 2.3
0.55
0.4
1 : Gate
2 : Drain
3 : Source
4 : Drain
ATPAK
Electrical Connection
2,4
1
3
Semiconductor Components Industries, LLC, 2013
July, 2013
61312 TKIM/70710PA TKIM TC-00002342 No. A1711-1/7
1 page  
Taping Specification
ATP114-TL-H
ATP114
No. A1711-5/7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet ATP114.PDF ] | |
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