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Número de pieza | MVGSF1N02LT1G | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | ON Semiconductor | |
Logotipo | ||
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No Preview Available ! MGSF1N02L, MVGSF1N02L
Power MOSFET
750 mAmps, 20 Volts
N−Channel SOT−23
These miniature surface mount MOSFETs low RDS(on) assure
minimal power loss and conserve energy, making these devices ideal
for use in space sensitive power management circuitry. Typical
applications are dc−dc converters and power management in portable
and battery−powered products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
Features
• Low RDS(on) Provides Higher Efficiency and Extends Battery Life
• Miniature SOT−23 Surface Mount Package Saves Board Space
• MVGSF Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable*
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Drain−to−Source Voltage
VDSS 20 Vdc
Gate−to−Source Voltage − Continuous
VGS ± 20 Vdc
Drain Current
− Continuous @ TA = 25°C
− Pulsed Drain Current (tp ≤ 10 ms)
ID 750 mA
IDM 2000
Total Power Dissipation @ TA = 25°C
PD 400 mW
Operating and Storage Temperature Range TJ, Tstg − 55 to 150 °C
Thermal Resistance, Junction−to−Ambient RqJA
300 °C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
TL
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
750 mAMPS, 20 VOLTS
RDS(on) = 90 mW
N−Channel
3
1
2
MARKING DIAGRAM/
PIN ASSIGNMENT
3
Drain
1
SOT−23
CASE 318
N2 M G
G
STYLE 21
1
Gate
2
Source
N2 = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and overbar may vary
depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
MGSF1N02LT1G
SOT−23 3000 / Tape &
(Pb−Free)
Reel
MVGSF1N02LT1G* SOT−23 3000 / Tape &
(Pb−Free)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
August, 2013 − Rev. 6
1
Publication Order Number:
MGSF1N02LT1/D
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet MVGSF1N02LT1G.PDF ] |
Número de pieza | Descripción | Fabricantes |
MVGSF1N02LT1G | Power MOSFET ( Transistor ) | ON Semiconductor |
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