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PDF DTU80P03 Data sheet ( Hoja de datos )
| Número de pieza | DTU80P03 | |
| Descripción | P-Channel 30 V (D-S) MOSFET | |
| Fabricantes | Din-Tek | |
| Logotipo |  |
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P-Channel 30 V (D-S) MOSFET
DTU80P03
www.din-tek.jp
PRODUCT SUMMARY
VDS (V)
- 30
RDS(on) ()
0.008 at VGS = - 10 V
0.009 at VGS = - 4.5 V
ID (A)a
± 80
± 80
FEATURES
• Compliant to RoHS Directive 2002/95/EC
Available
RoHS*
COMPLIANT
TO-252
S
G
GDS
Top View
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
Parameter
Symbol
Gate-Source Voltage
Continuous Drain Current (TJ = 175 °C)
Pulsed Drain Current
TC = 25 °C
TC = 125 °C
Avalanche Current
Repetitive Avalanche Energyb
L = 0.1 mH
Power Dissipation
TC = 25 °C (TO-220AB and TO-263)
TA = 25 °C (TO-263)c
Operating Junction and Storage Temperature Range
VGS
ID
IDM
IAR
EAR
PD
TJ, Tstg
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
PCB Mount (TO-263)c
Free Air (TO-220AB)
Junction-to-Case
Notes:
a. Package limited.
b. Duty cycle 1 %.
c. When mounted on 1" square PCB (FR-4 material).
d. See SOA curve for voltage derating.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Symbol
RthJA
RthJC
Limit
± 20
- 80a
- 65
- 240
- 60
180
187d
3.75
- 55 to 175
Limit
40
62.5
0.8
Unit
V
A
mJ
W
°C
Unit
°C/W
1
1 page  
THERMAL RATINGS
90
DTU80P03
www.din-tek.jp
1000
75 100 µs
100
60
Limited
1 ms
45 10 by RDS(on)*
10 ms
100 ms
DC
30
1
TC = 25 °C
15 Single Pulse
0
0 25 50 75 100 125 150 175
TC - Case Temperature (°C)
Maximum Avalanche and Drain Current
vs. Case Temperature
2
1 Duty Cycle = 0.5
0.1
0.1
* VGS
1 10 100
VDS - Drain-to-Source Voltage (V)
minimum VGS at which RDS(on) is specified
Safe Operating Area
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10- 4
10- 3
10- 2
10- 1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
1
10
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet DTU80P03.PDF ] | |
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