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PDF AUIRLR2908 Data sheet ( Hoja de datos )

Número de pieza AUIRLR2908
Descripción HEXFET Power MOSFET
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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No Preview Available ! AUIRLR2908 Hoja de datos, Descripción, Manual

AUTOMOTIVE GRADE
PD - 97734
AUIRLR2908
Features
l Advanced Planar Technology
l Logic-Level Gate Drive
l Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Repetitive Avalanche Allowed
up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified*
G
Description
Specifically designed for Automotive applications,
this Stripe Planar design of HEXFET® Power
MOSFETs utilizes the latest processing techniques
to achieve low on-resistance per silicon area. This
benefit combined with the fast switching speed and
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in Automotive and a wide variety of other applications.
HEXFET® Power MOSFET
D V(BR)DSS
80V
RDS(on) typ.
22.5m
max
ID (Silicon Limited)
k28m
39A
S ID (Package Limited)
30A
G
Gate
D
S
G
D-Pak
AUIRLR2908
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
Max.
39k
Units
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
28 A
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
cIDM Pulsed Drain Current
30
150
PD @TC = 25°C Power Dissipation
Linear Derating Factor
120
0.77
W
W/°C
VGS
EAS
EAS (tested )
IAR
EAR
dv/dt
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally Limited)
iSingle Pulse Avalanche Energy Tested Value
cAvalanche Current
hRepetitive Avalanche Energy
ePeak Diode Recovery dv/dt
± 16
180
250
See Fig. 12a, 12b, 15, 16
2.3
V
mJ
A
mJ
V/ns
TJ Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
Thermal Resistance
300
°C
Parameter
lRJC
Junction-to-Case
jRJA Junction-to-Ambient (PCB Mount)
Typ.
–––
–––
Max.
1.3
40
Units
°C/W
RJA Junction-to-Ambient
––– 110
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
10/17/11

1 page




AUIRLR2908 pdf
AUIRLR2908
100000
10000
1000
100
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
10
1
10
VDS, Drain-to-Source Voltage (V)
100
5.0
ID= 23A
4.0
3.0
VDS= 64V
VDS= 40V
VDS= 16V
2.0
1.0
0.0
0
5 10 15 20
QG Total Gate Charge (nC)
25
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
1000.00
100.00
10.00
TJ = 175°C
1.00 TJ = 25°C
0.10
0.2
VGS = 0V
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VSD, Source-to-Drain Voltage (V)
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100μsec
10
1msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1 10
10msec
100
VDS, Drain-to-Source Voltage (V)
1000
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
Fig 8. Maximum Safe Operating Area
5

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AUIRLR2908 arduino
AUIRLR2908
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
16.3 ( .641 )
15.7 ( .619 )
TRR TRL
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
FEED DIRECTION
8.1 ( .318 )
7.9 ( .312 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
13 INCH
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
16 mm
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com
11

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