PDF IXGH30N120C3H1 Data sheet ( Hoja de datos )

Número de pieza	IXGH30N120C3H1
Descripción	High speed PT IGBTs
Fabricantes	IXYS Corporation
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No Preview Available ! Preliminary Technical Information GenX3TM 1200V IGBT IXGH30N120C3H1 High speed PT IGBTs for 10-50kHz Switching VCES IC100 VCE(sat) tfi(typ) = 1200V = 24A ≤ 4.2V = 42ns Symbol VCES VCGR VGES VGEM IC25 IC100 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg Md TL TSOLD Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 100°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE= 15V, TJ = 125°C, RG = 5Ω Clamped Inductive Load TC = 25°C Mounting Torque Maximum Lead Temperature for Soldering 1.6mm (0.062 in.) from Case for 10s Maximum Ratings 1200 1200 V V ±20 V ±30 V 48 A 24 A 115 A 20 A 250 mJ ICM = 60 @VCE ≤ 1200 250 A V W -55 ... +150 150 -55 ... +150 °C °C °C 1.13/10 Nm/lb.in. 300 °C 260 °C 6g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVCES IC = 250μA, VGE = 0V VGE(th) IC = 250μA, VCE = VGE ICES VCE = VCES VGE= 0V TJ = 125°C IGES VCE = 0V, VGE = ±20V VCE(sat) IC = 24A, VGE = 15V, Note 2 TJ = 125°C Characteristic Values Min. Typ. Max. 1200 V 3.0 5.0 V 100 μA 1.5 mA ±100 nA 3.6 4.2 V 3.2 V TO-247AD G C E TAB G = Gate E = Emitter C = Collector TAB = Collector Features z Optimized for Low Conduction and Switching Losses z Square RBSOA z Anti-Parallel Ultra Fast Diode z Avalanche Rated z International Standard Package Advantages z High Power Density z Low Gate Drive Requirement Applications z AC Motor Speed Control z DC Servo and Robot Drives z DC Choppers z Uninterruptible Power Supplies (UPS) z Switch-Mode and Resonant-Mode Power Supplies © 2009 IXYS CORPORATION, All rights reserved DS100123(03/09) 1 page Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 3.0 10 2.8 Eoff Eon - - - - 2.6 TJ = 125ºC , VGE = 15V 2.4 VCE = 600V 9 8 7 2.2 6 2.0 I C = 48A 1.8 5 4 1.6 3 1.4 1.2 I C = 24A 2 1 1.0 0 4 6 8 10 12 14 16 18 20 22 24 26 28 30 RG - Ohms Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature 3.0 7 Eoff Eon - - - - 2.5 RG = 5Ω , VGE = 15V VCE = 600V 2.0 6 5 I C = 48A 1.5 4 1.0 3 I C = 24A 0.5 2 0.0 1 25 35 45 55 65 75 85 95 105 115 125 TJ - Degrees Centigrade Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 500 215 450 tf td(off) - - - - 200 400 RG = 5Ω , VGE = 15V 185 350 VCE = 600V 170 300 250 TJ = 125ºC 155 140 200 125 150 110 100 95 TJ = 25ºC 50 80 0 65 10 15 20 25 30 35 40 45 50 IC - Amperes © 2009 IXYS CORPORATION, All rights reserved IXGH30N120C3H1 Fig. 13. Inductive Switching Energy Loss vs. Collector Current 2.8 2.4 Eoff Eon - - - - RG = 5Ω , VGE = 15V 2.0 VCE = 600V TJ = 125ºC 1.6 7 6 5 4 1.2 3 0.8 2 0.4 TJ = 25ºC 1 0.0 0 10 15 20 25 30 35 40 45 50 IC - Amperes Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 380 t f td(off) - - - - 360 TJ = 125ºC, VGE = 15V VCE = 600V 340 400 350 300 320 I C = 24A 250 300 200 280 I C = 48A 260 150 100 240 50 4 6 8 10 12 14 16 18 20 22 24 26 28 30 RG - Ohms Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature 500 160 450 t f td(off) - - - - 400 RG = 5Ω , VGE = 15V 350 VCE = 600V 150 140 130 300 120 250 200 I C = 24A 150 I C = 48A 110 100 90 100 80 50 70 0 60 25 35 45 55 65 75 85 95 105 115 125 TJ - Degrees Centigrade 5 Page

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