|
|
Número de pieza | FGB20N60SFD_F085 | |
Descripción | 20A Field Stop IGBT | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de FGB20N60SFD_F085 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! FGB20N60SFD_F085
600V, 20A Field Stop IGBT
Features
• High current capability
• Low saturation voltage: VCE(sat) = 2.2V @ IC = 20A
• High input impedance
• Fast switching
• Qualified to Automotive Requirements of AEC-Q101
• RoHS complaint
Applications
• Inverters, SMPS, PFC, UPS
• Automotive Chargers, Converters, High Voltage
Auxiliaries
C
October 2013
General Description
Using novel field-stop IGBT technology, Fairchild’s new series
of field-stop IGBTs offers the optimum performance for
automotive chargers, inverters, and other applications where
low conduction and switching losses are essential.
C
D2-PAK
GE
Absolute Maximum Ratings
Symbol
Description
VCES
VGES
IC
ICM (1)
IF
IFM(1)
PD
TJ
Tstg
TL
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
@ TC = 25oC
@ TC = 100oC
Pulsed Collector Current
Diode Forward Current
Diode Forward Current
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
Pulsed Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
@ TC = 25oC
@ TC = 100oC
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Characteristics
Symbol
RθJC(IGBT) ( 2)
RθJC(Diode)
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Symbol
Parameter
RθJA
Thermal Resistance, Junction to Ambient (PCB Mount)(2)
©2013 Fairchild Semiconductor Corporation
FGB20N60SFD_F085 Rev. C1
1
G
E
Ratings
600
± 20
40
20
60
20
10
60
208
83
-55 to +150
-55 to +150
300
Ratings
0.6
2.6
Typ.
75
Units
V
V
A
A
A
A
A
A
W
W
oC
oC
oC
Units
oC/W
oC/W
Units
oC/W
www.fairchildsemi.com
1 page Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
20 Common Emitter
TC = 25oC
16
12
8
IC = 10A
40A
4
20A
0 0 4 8 12 16 20
Gate-Emitter Voltage, VGE [V]
Figure 9. Capacitance Characteristics
2500
2000
Common Emitter
VGE = 0V, f = 1MHz
Cies TC = 25oC
1500
1000
C oes
500
Cres
0
0.1 1
10
Collector-Emitter Voltage, VCE [V]
Figure 11. SOA Characteristics
30
100
10μs
100μs
10 1ms
10 ms
1 DC
0.1 *Notes:
1. TC = 25oC
0.01
1
2. TJ = 150oC
3. Single Pulse
10
100
Collector-Emitter Voltage, VCE [V]
1000
Figure 8. Saturation Voltage vs. VGE
20
Common Emitter
TC = 125oC
16
12
8
IC = 10A
40A
4
20A
0
0 4 8 12 16 20
Gate-Emitter Voltage, VGE [V]
Figure 10. Gate charge Characteristics
15
Common Emitter
TC = 25oC
12
VCC = 100V
300V
9 200V
6
3
0
0 20 40 60 80
Gate Charge, Qg [nC]
Figure 12. Turn-on Characteristics vs.
Gate Resistance
100
Common Emitter
VCC = 600V, VGE = 15V
IC = 20A
TC = 25oC
TC = 125oC
tr
td(on)
10
0 10 20 30 40 50
Gate Resistance, RG [Ω]
©2013 Fairchild Semiconductor Corporation
FGB20N60SFD_F085 Rev. C1
5
www.fairchildsemi.com
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet FGB20N60SFD_F085.PDF ] |
Número de pieza | Descripción | Fabricantes |
FGB20N60SFD_F085 | 20A Field Stop IGBT | Fairchild Semiconductor |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |