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PDF LBC846ALT1G Data sheet ( Hoja de datos )
| Número de pieza | LBC846ALT1G | |
| Descripción | General Purpose Transistors | |
| Fabricantes | Leshan Radio Company | |
| Logotipo |  |
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LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
• Moisture Sensitivity Level: 1
• ESD Rating – Human Body Model: >4000 V
ESD Rating – Machine Model: >400 V
• We declare that the material of product compliance with RoHS requirements.
• S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
LBC846ALT1G
Series
S-LBC846ALT1G
Series
3
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
LBC846
LBC847, LBC850
LBC848, LBC849
VCEO
Collector–Base Voltage
LBC846
LBC847, LBC850
LBC848, LBC849
VCBO
Emitter–Base Voltage
LBC846
LBC847, LBC850
LBC848, LBC849
VEBO
Collector Current – Continuous
THERMAL CHARACTERISTICS
IC
Characteristic
Symbol
Total Device Dissipation FR–5 Board
(Note 1.)
TA = 25°C
Derate above 25°C
PD
Thermal Resistance,
Junction to Ambient (Note 1.)
RqJA
Total Device Dissipation
Alumina Substrate (Note 2.)
TA = 25°C
Derate above 25°C
PD
Thermal Resistance,
Junction to Ambient (Note 2.)
RqJA
Junction and Storage
Temperature Range
TJ, Tstg
1. FR–5 = 1.0 x 0.75 x 0.062 in
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Value
65
45
30
80
50
30
6.0
6.0
5.0
100
Max
225
1.8
556
300
2.4
417
–55 to
+150
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
1
2
SOT–23
1
B ASE
3
COLLECT OR
2
EMIT T ER
MARKING DIAGRAM
3
xx
12
xx= Device Marking
(See Table Below)
Rev.A 1/13
1 page  
LESHAN RADIO COMPANY, LTD.
LBC846ALT1G Series
S-LBC846ALT1G Series
LBC846A, LBC847A, LBC848A
2.0
TA = 25°C
1.6
IC = 200 mA
1.2
IC = IC = IC = 50 mA
IC = 100 mA
10 mA 20 mA
0.8
0.4
1.0
-55°C to +125°C
1.2
1.6
2.0
2.4
2.8
0
0.02
0.1 1.0
IB, BASE CURRENT (mA)
10
Figure 5. Collector Saturation Region
20
0.2 1.0 10 100
IC, COLLECTOR CURRENT (mA)
Figure 6. Base−Emitter Temperature Coefficient
10
7.0 TA = 25°C
5.0 Cib
3.0
Cob
2.0
1.0
0.4 0.6 0.8 1.0
2.0
4.0 6.0 8.0 10
20
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitances
40
400
300
200
100
80
VCE = 10 V
TA = 25°C
60
40
30
20
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20
IC, COLLECTOR CURRENT (mAdc)
30
50
Figure 8. Current−Gain − Bandwidth Product
Rev.A 5/13
5 Page 
LESHAN RADIO COMPANY, LTD.
LBC846ALT1G Series
S-LBC846ALT1G Series
LBC847C, LBC848C, LBC849C, LBC850C
2.0
TA = 25°C
1.6
IC = 200 mA
1.2
IC = IC = IC = 50 mA
10 mA 20 mA
IC = 100 mA
0.8
0.4
1.0
-55°C to +125°C
1.2
1.6
2.0
2.4
2.8
0
0.02
0.1 1.0
IB, BASE CURRENT (mA)
10
Figure 29. Collector Saturation Region
20
0.2 1.0 10 100
IC, COLLECTOR CURRENT (mA)
Figure 30. Base−Emitter Temperature
Coefficient
10
7.0 TA = 25°C
5.0 Cib
3.0
Cob
2.0
1.0
0.4 0.6 0.8 1.0
2.0
4.0 6.0 8.0 10
20
VR, REVERSE VOLTAGE (VOLTS)
Figure 31. Capacitances
40
400
300
200
100
80
VCE = 10 V
TA = 25°C
60
40
30
20
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20
IC, COLLECTOR CURRENT (mAdc)
30
50
Figure 32. Current−Gain − Bandwidth Product
Rev.A 11/13
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet LBC846ALT1G.PDF ] | |
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