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PDF MT4600 Data sheet ( Hoja de datos )
| Número de pieza | MT4600 | |
| Descripción | Dual N & P-Channel PowerTrench MOSFET | |
| Fabricantes | MT Semiconductor | |
| Logotipo |  |
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MT4600
Dual N & P-Channel Po werTrench® MOSFET
Features
• N-Channel
30V/5A,
RDS (ON) = 28mΩ (max.) @ VGS =4.5V
RDS (ON) = 38mΩ (max.) @ VGS =2.5V
• P-Channel
-30V/-4.6A,
RDS (ON) = 63mΩ (max.) @ VGS =-4.5V
RDS (ON) = 85mΩ (max.) @ VGS = -2.5V
General Description
These dual N and P-Channel enhancement mode
power field effect transistors are produced using
MOS-TECH Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize
on-state ressitance and yet maintain superior switching
performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
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Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
(Note 1a)
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
N-CH
P-CH
30 -30
±12 ±12
5 -4.6
20 -19
2.5
1.6
1
0.9
-55 to +150
78
40
Units
V
V
A
W
°C
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
MT4600
MT4600
13"
Tape width
12mm
Quantity
2500 units
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1 page  
Typical Characteristics:N-CH
MT4600
10
ID==55AA
8
6
VDS = 5V
15V
10V
4
2
0
0 4 8 12 16
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
RDS(ON) LIMIT
100μs
10 1ms
10ms
100ms
1s
1 10s
DC
VGS = 10V
0.1 SINGLE PULSE
RθJA = 135oC/W
TA = 25oC
0.01
0.1 1 10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
1200
900
600
CISS
f = 1MHz
VGS = 0 V
300
0
0.0
COSS
CRSS
5.0 10.0 15.0
VDS, DRAIN TO SOURCE VOLTAGE (V)
20.0
Figure 8. Capacitance Characteristics.
50
40
30
20
10
0
0.001
0.01
SINGLE PULSE
RθJA = 135°C/W
TA = 25°C
0.1 1 10
t1, TIME (sec)
100 1000
Figure 10. Single Pulse Maximum
Power Dissipation.
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| PDF Descargar | [ Datasheet MT4600.PDF ] | |
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