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PDF AOTF20N60 Data sheet ( Hoja de datos )
| Número de pieza | AOTF20N60 | |
| Descripción | 20A N-Channel MOSFET | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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AOT20N60/AOTF20N60
600V,20A N-Channel MOSFET
General Description
Product Summary
The AOT20N60 & AOTF20N60 have been fabricated
using an advanced high voltage MOSFET process that is
designed to deliver high levels of performance and
robustness in popular AC-DC applications.By providing
low RDS(on), Ciss and Crss along with guaranteed avalanche
capability these parts can be adopted quickly into new
and existing offline power supply designs.
For Halogen Free add "L" suffix to part number:
AOT20N60L&AOTF20N60L
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
100% UIS Tested
100% Rg Tested
TO-220
Top View
TO-220F
700V@150℃
20A
< 0.37Ω
D
G
DS
G
S
GD
AOT20N60
AOTF20N60
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
AOT20N60
AOTF20N60
Drain-Source Voltage
VDS 600
Gate-Source Voltage
VGS ±30
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single plused avalanche energy G
Peak diode recovery dv/dt
ID
IDM
IAR
EAR
EAS
dv/dt
20 20*
12 12*
80
6.5
630
1260
5
TC=25°C
Power Dissipation B Derate above 25oC
PD
417
3.3
50
0.4
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
TJ, TSTG
TL
-55 to 150
300
Parameter
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Symbol
RθJA
RθCS
AOT20N60
65
0.5
AOTF20N60
65
--
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
0.3
2.5
S
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ oC
°C
°C
Units
°C/W
°C/W
°C/W
Rev2: Dec 2011
www.aosmd.com
Page 1 of 6
1 page  
AOT20N60/AOTF20N60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
1 RθJC=0.3°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
0.001
0.000001
Single Pulse
Ton
T
0.00001
0.0001
0.001
0.01
0.1
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance for AOT20N60 (Note F)
1
10
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
1 RθJC=2.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.001
0.00001
Single Pulse
PD
Ton
T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 13: Normalized Maximum Transient Thermal Impedance for AOTF20N60 (Note F)
100
Rev2: Dec 2011
www.aosmd.com
Page 5 of 6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet AOTF20N60.PDF ] | |
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