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Número de pieza | HT666 | |
Descripción | NPN EPITAXIAL PLANAR TRANSISTOR | |
Fabricantes | HI-SINCERITY | |
Logotipo | ||
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No Preview Available ! HI-SINCERITY
MICROELECTRONICS CORP.
HT666
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6464
Issued Date : 1993.09.07
Revised Date : 2005.02.15
Page No. : 1/4
Description
The HT666 is designed for general purpose amplifier and high-speed,medium-
power switching applications.
Features
• High Frequency Current Gain
• High Speed Switching Transistor
TO-92
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ........................................................................................................................... -55 ~ +150 °C
Junction Temperature ................................................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (TA=25°C) ............................................................................................................... 625 mW
• Maximum Voltages and Currents (TA=25°C)
BVCBO Collector to Base Voltage......................................................................................................................... 75 V
BVCEO Collector to Emitter Voltage...................................................................................................................... 40 V
BVEBO Emitter to Base Voltage.............................................................................................................................. 6 V
IC Collector Current ........................................................................................................................................ 600 mA
Electrical Characteristics (TA=25°C)
Symbol
BVCBO
*BVCEO
BVEBO
ICBO
ICEX
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
*hFE1
*hFE2
*hFE3
*hFE4
*hFE5
*hFE6
fT
Min. Typ. Max.
75 -
-
40 -
-
6- -
- - 10
- - 10
- - 50
- - 300
- -1
- - 1.2
- -2
35 -
-
50 -
-
75 -
-
100 300
40 -
-
50 -
-
300 -
-
HT666
Unit
V
V
V
nA
nA
nA
mV
V
V
V
-
-
-
-
-
-
MHz
Test Conditions
IC=10uA
IC=100mA
IE=10uA
VCB=60V
VCB=60V, VEB(off)=3V
VEB=3V
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VCE=10V, IC=100uA
VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=10V, IC=150mA
VCE=10V, IC=500mA
VCE=1V, IC=150mA
IC=20mA, VCE=20V, f=100MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
HSMC Product Specification
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet HT666.PDF ] |
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