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PDF PMPB10XNE Data sheet ( Hoja de datos )
| Número de pieza | PMPB10XNE | |
| Descripción | single N-channel Trench MOSFET | |
| Fabricantes | NXP Semiconductors | |
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PMPB10XNE
20 V, single N-channel Trench MOSFET
30 November 2012
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power
DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
1.2 Features and benefits
• 2.2 kV ESD protection
• Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
• Exposed drain pad for excellent thermal conduction
• Tin-plated, 100% solderable side pads for optical solder inspection
1.3 Applications
• Charging switch for portable devices
• DC-to-DC converters
• Power management in battery-driven portables
• Hard disk and computing power management
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s
VGS = 4.5 V; ID = 9 A; Tj = 25 °C
Min Typ Max Unit
- - 20 V
-12 -
12 V
[1] - - 12.9 A
- 10 14 mΩ
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
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NXP Semiconductors
PMPB10XNE
20 V, single N-channel Trench MOSFET
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.5
0.33
0.25
0.2
0.1
0.05
10
0.02
0.01
0
017aaa542
1
10-3
10-2
FR4 PCB, standard footprint
10-1
1
10 102 103
tp (s)
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103 017aaa543
Zth(j-a)
(K/W)
102 duty cycle = 1
0.75
0.33
0.2
10
0.5
0.25
0.1
0.05
0.02
0 0.01
1
10-3
10-2
10-1
FR4 PCB, mounting pad for drain 6 cm2
1
10 102 103
tp (s)
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
7. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
VGSth
gate-source threshold ID = 250 µA; VDS = VGS; Tj = 25 °C
voltage
IDSS drain leakage current VDS = 20 V; VGS = 0 V; Tj = 25 °C
IGSS gate leakage current VGS = 8 V; VDS = 0 V; Tj = 25 °C
PMPB10XNE
All information provided in this document is subject to legal disclaimers.
Product data sheet
30 November 2012
Min Typ Max Unit
20 - - V
0.4 0.65 0.9 V
- - 1 µA
- - 10 µA
© NXP B.V. 2012. All rights reserved
5 / 14
5 Page 
NXP Semiconductors
11. Revision history
Table 8. Revision history
Data sheet ID
Release date
PMPB10XNE v.1
20121130
PMPB10XNE
20 V, single N-channel Trench MOSFET
Data sheet status
Product data sheet
Change notice
-
Supersedes
-
PMPB10XNE
Product data sheet
All information provided in this document is subject to legal disclaimers.
30 November 2012
© NXP B.V. 2012. All rights reserved
11 / 14
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