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PDF IXGH30N120B3D1 Data sheet ( Hoja de datos )
| Número de pieza | IXGH30N120B3D1 | |
| Descripción | GenX3 1200V IGBTs | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IXGH30N120B3D1 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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GenX3TM 1200V IGBT
High speed Low Vsat PT
IGBTs 3-20 kHz switching
IXGH30N120B3D1
IXGT30N120B3D1
VCES
IC110
VCE(sat)
tfi(typ)
= 1200V
= 30A
≤£ 3.5V
= 204ns
Symbol
VCES
VCGR
VGES
VGEM
IC110
IF110
ICM
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
Md
TL
TSOLD
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Transient
TC = 110°C
TC = 110°C
TC = 25°C, 1ms
VGE = 15V, TVJ = 125°C, RG = 5Ω
Clamped inductive load
TC = 25°C
Mounting torque (TO-247)
Maximum lead temperature for soldering
1.6mm (0.062 in.) from case for 10s
TO-247
TO-268
Maximum Ratings
1200
1200
V
V
±20
±30
30
28
150
ICM = 60
@ 0.8 • VCE
300
V
V
A
A
A
A
W
-55 ... +150
150
-55 ... +150
1.13 / 10
300
260
6
4
°C
°C
°C
Nm/lb.in.
°C
°C
g
g
Symbol
VGE(th)
ICES
IGES
VCE(sat)
Test Conditions
Characteristic Values
(TJ
=
25°C, unless
Min.
otherwise specified)
Typ. Max.
IC = 250μA, VCE = VGE
VCE = VCES
VGE = 0V
TJ = 125°C
VCE = 0V, VGE = ±20V
IC
=
30A,
VGE
=
15V,
Note
1
TJ
=
125°C
3.0 5.0 V
300 μA
1.5 mA
±100 nA
2.96
2.95
3.5 V
V
TO-247 AD (IXGH)
G
CE
TO-268 (IXGT)
C (TAB)
GE
C (TAB)
G = Gate
E = Emitter
C = Collector
TAB = Collector
Features
z Optimized for low conduction and
switching losses
z Square RBSOA
z Anti-parallel ultra fast diode
z International standard packages
Advantages
z High power density
z Low gate drive requirement
Applications
z Power Inverters
z UPS
z Motor Drives
z SMPS
z PFC Circuits
z Welding Machines
© 2008 IXYS CORPORATION, All rights reserved
DS99566A(05/08)
1 page  
18
16
14
12
10
8
6
4
2
5
Fig. 12. Inductive Switching
Energy Loss vs. Gate Resistance
Eoff Eon - - - -
TJ = 125ºC , VGE = 15V
VCE = 960V
I C = 60A
20
18
16
14
12
10
I C = 30A
8
6
4
7 9 11 13 15 17 19 21 23 25
RG - Ohms
Fig. 14. Inductive Switching
Energy Loss vs. Junction Temperature
14 16
12
Eoff Eon - - - -
RG = 5Ω , VGE = 15V
VCE = 960V
10
8
I C = 60A
14
12
10
68
46
I C = 30A
24
02
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 16. Inductive Turn-off
Switching Times vs. Collector Current
450 400
400 t f
td(off) - - - -
RG = 5Ω , VGE = 15V
350 VCE = 960V
350
300
300
TJ = 125ºC
250
250 200
200
TJ = 25ºC
150
150 100
100 50
15 20 25 30 35 40 45 50 55 60
IC - Amperes
© 2008 IXYS CORPORATION, All rights reserved
IXGH30N120B3D1
IXGT30N120B3D1
Fig. 13. Inductive Switching
Energy Loss vs. Collector Current
16
14 Eoff
Eon - - - -
RG = 5Ω , VGE = 15V
12 VCE = 960V
10
TJ = 125ºC
8
6
4
2 TJ = 25ºC
0
15 20 25 30 35 40 45 50 55
IC - Amperes
16
14
12
10
8
6
4
2
0
60
460
440
420
400
380
360
340
320
300
280
260
240
5
Fig. 15. Inductive Turn-off
Switching Times vs. Gate Resistance
650
t f td(off) - - - -
TJ = 125ºC, VGE = 15V
VCE = 960V
600
550
500
450
I C = 60A
400
350
300
I C = 30A
250
200
150
100
7 9 11 13 15 17 19 21 23 25
RG - Ohms
Fig. 17. Inductive Turn-off
Switching Times vs. Junction Temperature
425 280
400 t f
td(off) - - - -
375 RG = 5Ω , VGE = 15V
350 VCE = 960V
265
250
235
325 220
300 I C = 60A, 30A
275
205
190
250 175
225 160
200 145
175 130
150 115
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet IXGH30N120B3D1.PDF ] | |
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