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PDF LMBD6100LT1G Data sheet ( Hoja de datos )
| Número de pieza | LMBD6100LT1G | |
| Descripción | Monolithic Dual Switching Diode | |
| Fabricantes | Leshan Radio Company | |
| Logotipo |  |
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LESHAN RADIO COMPANY, LTD.
Monolithic Dual Switching Diode
FEATURE
z We declare that the material of product compliance with
RoHS requirements.
z S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
MAXIMUM RATINGS(EACH DIODE)
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
Symbol
VR
IF
I FM(surge)
Value
70
200
500
Unit
Vdc
mAdc
mAdc
LMBD6100LT1G
S-LMBD6100LT1G
3
1
2
SOT– 23
THERMALCHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board (1)
T A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
R θ JA
PD
R θ JA
T J , T stg
Max
225
1.8
556
300
2.4
417
–55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
ORDERING INFORMATION
DEVICE
LMBD6100LT1G
S-LMBD6100LT1G
MARKING
5BM
LMBD6100LT3G
S-LMBD6100LT3G
5BM
SHIPPING
3000/Tape & Reel
10000/Tape & Reel
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)(EACH DIODE)
Characteristic
Symbol
Min
OFFCHARACTERISTICS
Reverse Breakdown Voltage
(I (BR) = 100 µAdc)
V (BR)
70
Reverse Voltage Leakage Current
(V R = 50 Vdc)
Forward Voltage
(I F = 1.0 mAdc)
(I F = 100 mAdc)
Reverse Recovery Time
(I F = I R = 10 mAdc,IR(REC)=1.0mAdc) (Figure 1)
Capacitance(VR=0V)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
IR —
VF
0.55
0.80
t rr —
C—
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3
CATHODE
Max
—
0.1
0.7
1.1
4.0
2.5
ANODE
1
2
ANODE
Unit
Vdc
µAdc
Vdc
ns
pF
Rev.O 1/3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet LMBD6100LT1G.PDF ] | |
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