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PDF STGP30M65DF2 Data sheet ( Hoja de datos )
| Número de pieza | STGP30M65DF2 | |
| Descripción | Trench gate field-stop IGBT | |
| Fabricantes | STMicroelectronics | |
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STGP30M65DF2
Trench gate field-stop IGBT, M series 650 V, 30 A low loss
Datasheet - production data
Figure 1: Internal schematic diagram
Features
• 6 µs of short-circuit withstand time
• VCE(sat) = 1.55 V (typ.) @ IC = 30 A
• Tight parameters distribution
• Safer paralleling
• Low thermal resistance
• Soft and very fast recovery antiparallel diode
Applications
• Motor control
• UPS
• PFC
Description
This device is an IGBT developed using an
advanced proprietary trench gate field-stop
structure. The device is part of the M series of
IGBTs, which represent an optimum compromise
in performance to maximize the efficiency of
inverter systems where low-loss and short-circuit
capability are essential. Furthermore, a positive
VCE(sat) temperature coefficient and tight
parameter distribution result in safer paralleling
operation.
Order code
STGP30M65DF2
Table 1: Device summary
Marking
Package
G30M65DF2
TO-220
Packaging
Tube
April 2015
DocID027355 Rev 2
This is information on a product in full production.
1/17
www.st.com
1 page  
STGP30M65DF2
Symbol
Electrical characteristics
Table 6: IGBT switching characteristics (inductive load)
Parameter
Test conditions
Min. Typ. Max. Unit
td(on)
tr
(di/dt)on
td(off)
tf
Eon(1)
Eoff(2)
Ets
td(on)
tr
(di/dt)on
td(off)
tf
Eon
Eoff
Ets
Turn-on delay time
Current rise time
Turn-on current slope
Turn-off-delay time
Current fall time
Turn-on switching losses
Turn-off switching losses
Total switching losses
Turn-on delay time
Current rise time
Turn-on current slope
Turn-off-delay time
Current fall time
Turn-on switching losses
Turn-off switching losses
Total switching losses
tsc Short-circuit withstand time
VCE = 400 V, IC = 30 A,
VGE = 15 V, RG = 10 Ω
(see Figure 29: " Test
circuit for inductive load
switching" )
VCE = 400 V, IC = 30 A,
VGE = 15 V, RG = 10 Ω
TJ = 175 °C (see Figure
29: " Test circuit for
inductive load switching" )
VCC ≤ 400 V, VGE = 15 V,
TJstart = 150 °C
31.6 -
ns
13.4 -
ns
1791 - A/µs
115 -
ns
110 -
ns
0.3 - mJ
0.96 - mJ
1.26 - mJ
30 - ns
17 - ns
1435 - A/µs
116 -
ns
194 -
ns
0.67 - mJ
1.36 - mJ
2.03 - mJ
6 - µs
Notes:
(1)Energy losses include reverse recovery of the diode.
(2)Turn-off losses also include the tail of the collector current.
Table 7: Diode switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
trr
Qrr
Irrm
dIrr/dt
Err
trr
Qrr
Irrm
dIrr/dt
Err
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Peak rate of fall of reverse
recovery current during tb
Reverse recovery energy
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Peak rate of fall of reverse
recovery current during tb
Reverse recovery energy
IF = 30 A, VR = 400 V,
VGE = 15 V (see Figure 29: "
Test circuit for inductive load
switching") di/dt = 1000 A/µs
IF = 30 A, VR = 400 V,
VGE = 15 V TJ = 175 °C
(see Figure 29: " Test circuit
for inductive load switching")
di/dt = 1000 A/µs
- 140
- 880
- 17
- 650
- 115
- 244
- 2743
- 25
- 220
- 320
ns
nC
A
A/µs
µJ
ns
nC
A
A/µs
µJ
DocID027355 Rev 2
5/17
5 Page 
STGP30M65DF2
Electrical characteristics
Figure 27: Thermal impedance for IGBT
K
δ=0.5
ZthTO2T_B
0.2
0.1
10-1
0.05
0.01
0.02
Zth=k Rthj-c
δ=tp/t
Single pulse
10-2
10-5
10-4
10-3
tp
t
10-2
10-1
tp(s)
Figure 28: Thermal impedance for diode
DocID027355 Rev 2
11/17
11 Page | ||
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| PDF Descargar | [ Datasheet STGP30M65DF2.PDF ] | |
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