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PDF PJF20N65 Data sheet ( Hoja de datos )
| Número de pieza | PJF20N65 | |
| Descripción | 650V N-Channel MOSFETs | |
| Fabricantes | Potens semiconductor | |
| Logotipo |  |
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650V N-Channel MOSFETs
General Description
These N-Channel enhancement mode power field effect
transistors are using advanced super junction
technology. This advanced technology has been
especially tailored to minimize on-state resistance,
provide superior switching performance, and withstand
high energy pulse in the avalanche and commutation
mode. These devices are well suited for high efficiency
switch mode power supply
TO220F Pin Configuration
GDS
PJF20N65
Features
20A,650V, RDS(ON) =0.19Ω@VGS = 10V
Low gate charge (typical 52nC)
Low Crss (typical 8.5 pF)
Improved dv/dt capability
Fast switching
100% EAS Guaranteed
Green Device Available
Applications
High efficient switched mode power supplies
TV Power
Adapter/charger
Server Power
PV Inverter / UPS
℃Absolute Maximum Ratings Tc=25 unless otherwise noted
Symbol
VDS
VGS
ID
IDM
EAS
IAS
PD
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
℃Drain Current – Continuous (TC=25 )
℃Drain Current – Continuous (TC=100 )
Drain Current – Pulsed
Single Pulse Avalanche Energy
Single Pulse Avalanche Current
℃Power Dissipation (TC=25 )
℃Power Dissipation – Derate above 25
Storage Temperature Range
Operating Junction Temperature Range
(Note 1)
(Note 2)
(Note 2)
Thermal Characteristics
Symbol
RθJA
RθJC
Parameter
Thermal Resistance Junction to ambient
Thermal Resistance Junction to Case
Rating
650
±30
20
12.5
80
248
6
70
0.56
-55 to 150
-55 to 150
Typ.
---
---
Max.
62
1.8
Units
V
V
A
A
A
mJ
A
W
℃W/
℃
℃
Unit
℃/W
℃/W
Potens semiconductor corp.
Ver.1.00 Apr.30 2012
1
1 page  
650V N-Channel MOSFETs
TO220F PACKAGE OUTLINE DIMENSION
PJF20N65
Symbol
A
A1
A2
A3
B1
B2
B3
C
C1
C2
D
D1
D2
D3
E
E1
E2
E3
E4
ϴ
Dimension In Millimeters
Min Nom Max
9.960
10.160
7.000
10.360
3.080
3.180
3.280
9.260
9.460
9.660
15.670
15.870
16.070
4.500
4.700
4.900
6.480
6.680
6.880
3.200
3.300
3.400
15.600
15.800
16.000
9.550
9.750
9.950
2.54 (TYP)
- - 1.470
0.700
0.800
0.900
0.250
0.350
0.450
2.340
2.540
2.740
0.700
1.0*450
0.450
0.500
0.600
2.560
2.760
2.960
300
Min
0.392
0.276
0.121
0.365
0.617
0.177
0.255
0.126
0.614
0.376
-
0.028
0.010
0.092
0.018
0.101
Dimension In Inches
Nom
Max
0.400
0.408
0.000
0.000
0.125
0.129
0.372
0.380
0.625
0.633
0.185
0.193
0.263
0.271
0.130
0.134
0.622
0.630
0.384
0.392
1.00 (TYP)
- 0.058
0.031
0.035
0.014
0.018
0.100
0.108
0.028
1.0*450
0.020
0.024
0.109
0.117
300
Potens semiconductor corp.
Ver.1.00 Apr.30 2012
5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet PJF20N65.PDF ] | |
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