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Número de pieza | LRB411DLT1G | |
Descripción | Schottky Barrier Diodes | |
Fabricantes | Leshan Radio Company | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de LRB411DLT1G (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! LESHAN RADIO COMPANY, LTD.
Schottky barrier diode
LRB411DLT1G
zApplications
Low current rectification
LRB411DLT1G
3
zFeatures
1) Small mold type. (SOT-23)
2) Low IR
3) High reliability.
zConstruction
Silicon epitaxial planar
z We declare that the material of product
compliance with RoHS requirements.
zAbsolute maximum ratings (Ta = 25°C)
Param eter
Revers e voltage (repetitive peak)
Revers e voltage (DC)
Average rectified forward current(*1)
Forward current s urge peak (60Hz・1cyc)(*1)
Junction tem perature
Storage tem perature
(*1) Rating of per diode
Sym bol
VRM
VR
Io
IFSM
Tj
Ts tg
Lim its
40
20
500
3
125
-40 to +125
zElectrical characteristics (Ta = 25°C)
Param eter
Forwarad voltage
Revers e current
Capacitance between term inal
Sym bol Min. Typ. Max.
VF1 - - 0.50
VF2 - - 0.30
IR1 - - 30
Ct1 - 20 -
1
2
SOT– 23
3
CATHODE
1
ANODE
Unit
V
V
mA
A
℃
℃
Unit Conditions
V IF=500m A
V IF=10m A
µA VR=10V
pF VR=10V , f=1MHz
z Device marking and ordering information
Device
Marking
LRB411DLT1G
D3E
LRB411DLT3G
D3E
Shipping
3000/Tape&Reel
10000/Tape&Reel
Rev.O 1/4
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet LRB411DLT1G.PDF ] |
Número de pieza | Descripción | Fabricantes |
LRB411DLT1G | Schottky Barrier Diodes | Leshan Radio Company |
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