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PDF STFW60N65M5 Data sheet ( Hoja de datos )
| Número de pieza | STFW60N65M5 | |
| Descripción | N-CHANNEL MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STW60N65M5
STFW60N65M5
N-channel 650 V, 0.049 Ω, 46 A MDmesh™ V Power MOSFET
in TO-247, TO-3PF
Features
Order codes
STFW60N65M5
t(s)STW60N65M5
VDSS @
TJmax
710 V
RDS(on)
max
< 0.059 Ω
ID
46 A
c■ Worldwide best RDS(on) * area amongst the
usilicon based devices
rod■ Higher VDSS rating
P■ High dv/dt capability
te■ Excellent switching performance
le■ Easy to drive
so■ 100% avalanche tested
ObApplication
) -Switching applications
ct(sDescription
duThe devices are N-channel MDmesh™ V Power
roMOSFET based on an innovative proprietary
Pvertical process technology, which is combined
tewith STMicroelectronics’ well-known
lePowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
soresistance, which is unmatched among silicon-
bbased Power MOSFETs, making it especially
Osuitable for applications which require superior
3
2
1
TO-247
1
3
2
1
TO-3PF
Figure 1. Internal schematic diagram
$
'
3
!-V
power density and outstanding efficiency.
Table 1. Device summary
Order codes
STFW60N65M5
STW60N65M5
Marking
60N65M5
Package
TO-3PF
TO-247
Packaging
Tube
May 2011
Doc ID 18222 Rev 2
1/16
www.st.com
16
1 page  
STFW60N65M5, STW60N65M5
Electrical characteristics
Table 6. Switching times
Symbol
Parameter
td (v)
tr (v)
tf (i)
tc(off)
Voltage delay time
Voltage rise time
Current fall time
Crossing time
Test conditions
VDD = 400 V, ID = 30 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 18)
(see Figure 21)
Min. Typ. Max Unit
90 ns
11 ns
--
13 ns
16 ns
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
t(s)ISD
ISDM (1)
ucVSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 46 A, VGS = 0
dtrr
roQrr
PIRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 46 A, di/dt = 100 A/µs
VDD = 100 V (see Figure 21)
tetrr
leQrr
soIRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 46 A, di/dt = 100 A/µs
VDD = 100 V, Tj = 150 °C
(see Figure 21)
b1. Pulse width limited by safe operating area
Obsolete Product(s) - O2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
-
-
-
-
46 A
184 A
1.5 V
448 ns
10 µC
45 A
534 ns
14 µC
52 A
Doc ID 18222 Rev 2
5/16
5 Page 
STFW60N65M5, STW60N65M5
Package mechanical data
Table 8. TO-3PF mechanical data
Dim.
Min.
mm
Typ.
Max.
A 5.30
5.70
C 2.80
3.20
D 3.10
3.50
D1 1.80
2.20
E 0.80
1.10
F 0.65
0.95
t(s)F2 1.80
2.20
G 10.30
11.50
ucG1 5.45
rodH 15.30
15.70
PL 9.80
10 10.20
teL2 22.80
23.20
leL3 26.30
26.70
soL4 43.20
44.40
bL5 4.30
4.70
- OL6 24.30
24.70
t(s)L7 14.60
15
cN 1.80
2.20
uR 3.80
4.20
Obsolete ProdDia 3.40
3.80
Doc ID 18222 Rev 2
11/16
11 Page | ||
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