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PDF STGF8NC60KD Data sheet ( Hoja de datos )
| Número de pieza | STGF8NC60KD | |
| Descripción | 600V - 8A - short circuit rugged IGBT | |
| Fabricantes | STMicroelectronics | |
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STGB8NC60KD - STGD8NC60KD
STGF8NC60KD - STGP8NC60KD
600 V - 8 A - short circuit rugged IGBT
Features
■ Lower on voltage drop (VCE(sat))
■ Lower CRES / CIES ratio (no cross-conduction
susceptibility)
■ Very soft ultra fast recovery antiparallel diode
■ Short circuit withstand time 10 µs
Applications
■ High frequency motor controls
■ SMPS and PFC in both hard switch and
resonant topologies
■ Motor drivers
Description
This IGBT utilizes the advanced PowerMESH™
process resulting in an excellent trade-off
between switching performance and low on-state
behavior.
3
2
1
TO-220
3
2
1
TO-220FP
2
3
1
DPAK
2
3
1
D²PAK
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
Marking
STGB8NC60KDT4
GB8NC60KD
STGD8NC60KDT4
GD8NC60KD
STGF8NC60KD
GF8NC60KD
STGP8NC60KD
GP8NC60KD
Package
D²PAK
DPAK
TO-220FP
TO-220
April 2008
Rev 2
Packaging
Tape and reel
Tape and reel
Tube
Tube
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18
1 page  
STGB8NC60KD - STGD8NC60KD - STGF8NC60KD - STGP8NC60KD Electrical characteristics
Table 6. Switching on/off (inductive load) (continued)
Symbol
Parameter
Test conditions
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall time
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall time
Vcc = 390 V, IC = 3 A,
RGE = 10 Ω, VGE =15 V
(see Figure 21)
Vcc = 390 V, IC = 3 A,
RGE=10 Ω, VGE =15 V,
TC = 125 °C
(see Figure 21)
Min. Typ. Max. Unit
33 ns
72 ns
82 ns
60 ns
106 ns
136 ns
Table 7. Switching energy (inductive load)
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Eon(1)
Eoff(2)
Ets
Turn-on switching losses
Turn-off switching losses
Total switching losses
Eon(1)
Eoff(2)
Ets
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCC = 390 V, IC = 3 A
RG= 10 Ω, VGE=15 V
(see Figure 21)
VCC = 390 V, IC = 3 A
RG= 10 Ω, VGE= 15 V,
TC = 125 °C
(see Figure 21)
55 µJ
85 µJ
140 µJ
87 µJ
162 µJ
249 µJ
1. Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in
a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the
same temperature (25°C and 125°C)
2. Turn-off losses include also the tail of the collector current
Table 8. Collector-emitter diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
VF Forward on-voltage
IF = 3 A
IF = 3 A, TC = 125 °C
trr Reverse recovery time
IF = 3 A, VR = 30 V,
Qrr Reverse recovery charge di/dt = 100 A/µs
Irrm Reverse recovery current (see Figure 22)
trr Reverse recovery time
IF = 3 A,VR = 30 V,
Qrr Reverse recovery charge TC =125 °C, di/dt = 100 A/µs
Irrm Reverse recovery current (see Figure 22)
1.6 2.1
1.3
23.5
16.5
1.4
39
39
2
V
V
ns
nC
A
ns
nC
A
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5 Page 
STGB8NC60KD - STGD8NC60KD - STGF8NC60KD - STGP8NC60KD Package mechanical data
TO-220 mechanical data
mm inch
Dim
Min Typ Max Min Typ Max
A 4.40
4.60 0.173
0.181
b 0.61
0.88 0.024
0.034
b1 1.14
1.70 0.044
0.066
c 0.48
0.70 0.019
0.027
D 15.25
15.75
0.6
0.62
D1 1.27
0.050
E 10
10.40
0.393
0.409
e 2.40
2.70 0.094
0.106
e1 4.95
5.15 0.194
0.202
F 1.23
1.32 0.048
0.051
H1 6.20
6.60 0.244
0.256
J1 2.40
2.72 0.094
0.107
L 13
14 0.511
0.551
L1 3.50
3.93 0.137
0.154
L20 16.40
0.645
L30 28.90
1.137
∅P 3.75
3.85 0.147
0.151
Q 2.65
2.95 0.104
0.116
11/18
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