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Número de pieza | STP3NB100 | |
Descripción | N-CHANNEL PowerMESH MOSFET | |
Fabricantes | STMicroelectronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de STP3NB100 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! STP3NB100
STP3NB100FP
N-CHANNEL 1000V - 5.3Ω - 3A TO-220/TO-220FP
PowerMesh™ MOSFET
TYPE
VDSS
RDS(on)
ID
PRELIMINARY DATA
STP3NB100
1000 V
<6Ω
3A
STP3NB100FP
1000 V
<6Ω
3A
s TYPICAL RDS(on) = 5.3Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
3
2
1
3
2
1
)DESCRIPTION
t(sUsing the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
cvanced family of power MOSFETs with outstanding
uperformances. The new patent pending strip layout
rodcoupled with the Company’s proprieraty edge termi-
nation structure, gives the lowest RDS(on) per area,
Pexceptional avalanche and dv/dt capabilities and
teunrivalled gate charge and switching characteris-
tics.
oleAPPLICATIONS
ss HIGH CURRENT, HIGH SPEED SWITCHING
bs SWITH MODE POWER SUPPLIES (SMPS)
Os DC-AC CONVERTERS FOR WELDING
-EQUIPMENT
t(s)ABSOLUTE MAXIMUM RATINGS
cSymbol
Parameter
roduVDS
PVDGR
teVGS
leID
soID
ObIDM (v)
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
Gate- source Voltage
Drain Current (continuos) at TC = 25°C
Drain Current (continuos) at TC = 100°C
Drain Current (pulsed)
TO-220
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
Value
STP3NB100 STP3NB100FP
1000
1000
±30
3 3 (*)
1.9 1.9 (*)
12 12
Unit
V
V
V
A
A
A
PTOT
Total Dissipation at TC = 25°C
100 35 W
Derating Factor
0.8
0.28
W/°C
dv/dt (1) Peak Diode Recovery voltage slope
4.5 4.5 V/ns
VISO
Insulation Withstand Voltage (DC)
-
2500
V
Tstg Storage Temperature
–65 to 150
°C
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
(1)ISD ≤3A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
150
(*)Limited only by maximum temperature allowed
°C
August 2001
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
1/7
1 page STP3NB100/FP
TO-220 MECHANICAL DATA
DIM.
MIN.
mm
TYP.
MAX.
MIN.
inch
TYP.
MAX.
A 4.40
4.60 0.173
0.181
C 1.23
1.32 0.048
0.051
D 2.40
2.72 0.094
0.107
D1 1.27
0.050
E 0.49
0.70 0.019
0.027
F 0.61
0.88 0.024
0.034
F1 1.14
1.70 0.044
0.067
F2 1.14
1.70 0.044
0.067
G
G1
t(s)H2
L2
cL4
duL5
roL6
L7
PL9
teDIA.
4.95
2.4
10.0
13.0
2.65
15.25
6.2
3.5
3.75
16.4
5.15
2.7
10.40
14.0
2.95
15.75
6.6
3.93
3.85
0.194
0.094
0.393
0.511
0.104
0.600
0.244
0.137
0.147
0.645
0.203
0.106
0.409
0.551
0.116
0.620
0.260
0.154
0.151
t(s) - ObsoleL2
lete ProducDia.
Obso L5
L9
L7
L6 L4
P011C
5/7
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet STP3NB100.PDF ] |
Número de pieza | Descripción | Fabricantes |
STP3NB100 | N-CHANNEL PowerMESH MOSFET | STMicroelectronics |
STP3NB100FP | N-CHANNEL PowerMESH MOSFET | STMicroelectronics |
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