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PDF STGP3NB60HDFP Data sheet ( Hoja de datos )
| Número de pieza | STGP3NB60HDFP | |
| Descripción | N-CHANNEL PowerMESH IGBT | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STGP3NB60HD
® STGP3NB60HDFP
N-CHANNEL 3A - 600V TO-220/FP
PowerMESH™ IGBT
TYPE
VCES
VCE(sat)
IC
STGP3NB60HD
STGP3NB60HDFP
600 V < 2.8 V
600 V < 2.8 V
3A
3A
s HIGH INPUT IMPEDANCE
(VOLTAGE DRIVEN)
s LOW ON-VOLTAGE DROP (Vcesat)
s LOW GATE CHARGE
s HIGH CURRENT CAPABILITY
s VERY HIGH FREQUENCY OPERATION
s OFF LOSSES INCLUDE TAIL CURRENT
s CO-PACKAGED WITH TURBOSWITCH™
ANTIPARALLEL DIODE
DESCRIPTION
Using the latest high voltage technology based
on a patented strip layout, STMicroelectronics
has designed an advanced family of IGBTs, the
PowerMESH™ IGBTs, with outstanding
perfomances. The suffix ”H” identifies a family
optimized to achieve very low switching times for
high frequency applications (<120kHz).
APPLICATIONS
s HIGH FREQUENCY MOTOR CONTROLS
s SMPS AND PFC IN BOTH HARD SWITCH
AND RESONANT TOPOLOGIES
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
P ar am e t er
VCES Collector-Emitter Voltage (VGS = 0)
VGE Gate-Emitter Voltage
IC Collector Current (continuous) at Tc = 25 oC
IC Collector Current (continuous) at Tc = 100 oC
ICM(•) Collector Current (pulsed)
Ptot Total Dissipation at Tc = 25 oC
Derating Factor
Ts tg Storage T emperature
Tj Max. O perating Junct ion T emperature
(•) Pulse width limited by max. junction temperature
Va lue
STG P7NB60HD STGP7NB60HDF P
600 600
± 20
± 20
66
33
24 24
70 35
0.56
0.28
-65 to 150
150
Unit
V
V
A
A
A
W
W /o C
oC
oC
June 1999
1/9
1 page  
STGP3NB60HD/FP
Normalized Breakdown Voltage vs Temperature
Capacitance Variations
Gate Charge vs Gate-Emitter Voltage
Total Switching Losses vs Gate Resistance
Total Switching Losses vs Temperature
Total Switching Losses vs Collector Current
5/9
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet STGP3NB60HDFP.PDF ] | |
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