|
|
PDF HY5N60 Data sheet ( Hoja de datos )
| Número de pieza | HY5N60 | |
| Descripción | 600V N-Channel MOSFET | |
| Fabricantes | HOOYI | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de HY5N60 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
600V N-Channel MOSFET
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Excellent Gate Charge: 14nC(Typ)
Extended Safe Operating Area
Lower RDS(ON) : 2 Ω(Typ.) @VGS =10V
100% Avalanche Tested
HY5N60
BVDSS = 640
RDS(on) = 2 Ω
ID = 5 A
TO-220
1
23
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25℃)
– Continuous (TC = 100℃)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
(Note 2)
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
600
5
3
20
±30
215
5
10
4.5
PD Power Dissipation (TC = 25℃)
- Derate above 25℃
TJ, TSTG
Operating and Storage Temperature Range
TL Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
* Drain current limited by maximum junction temperature
100
0.8
-55 to +150
300
Thermal Resistance Characteristics
Symbol
RθJC
RθCS
RθJA
Junction-to-Case
Parameter
Case-to-Sink
Junction-to-Ambient
Typ.
--
0.5
--
Max.
1.25
--
62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/℃
℃
℃
Units
℃/W
1 www.hooyi-semi.com
1 page  
HY5N60
Fig 12. Gate Charge Test Circuit & Waveform
Same Type
50KΩ
as DUT
12V 200nF
300nF
VGS
10V
Qg
VGS
VDS
Qgs Qgd
DUT
3mA
Charge
10V
10V
Fig 13. Resistive Switching Test Circuit & Waveforms
VDS
RG
RL
VDD
( 0.5 rated VDS )
DUT
VDS
90%
Vin 10%
td(on)
tr
t on
td(off)
tf
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
VDS
ID
RG
L
VDD
EAS =
--21--
LL IAS2
------B--V--D--S-S-------
BVDSS -- VDD
BVDSS
IAS
ID (t)
DUT
VDD
VDS (t)
t p Time
5 www.hooyi-semi.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet HY5N60.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| HY5N60 | 600V N-Channel MOSFET | HOOYI |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |