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PDF STI260N6F6 Data sheet ( Hoja de datos )

Número de pieza STI260N6F6
Descripción N-channel Power MOSFET
Fabricantes STMicroelectronics 
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STI260N6F6
STP260N6F6
N-channel 60 V, 0.0024 Ω, 120 A STripFET™ VI DeepGATE™
Power MOSFET in TO-220 and I²PAK packages
Features
Order codes
STI260N6F6
STP260N6F6
VDSS
60 V
RDS(on) max
ID
< 0.003 Ω 120 A
Low gate charge
Very low on-resistance
High avalanche ruggedness
Application
Switching applications
Description
These devices are N-channel Power MOSFETs
developed using the 6th generation of STripFET™
DeepGATE™ technology, with a new gate
structure. The resulting Power MOSFETs exhibits
the lowest RDS(on) in all packages.
TAB
TAB
123
I²PAK
3
2
1
TO-220
Figure 1. Internal schematic diagram
$ 4!"
'
3
!-V
Table 1. Device summary
Order codes
STI260N6F6
STP260N6F6
Marking
260N6F6
Package
I²PAK
TO-220
Packaging
Tube
January 2012
Doc ID 17467 Rev 5
1/14
www.st.com
14

1 page




STI260N6F6 pdf
STI260N6F6, STP260N6F6
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max Unit
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 120 A, VGS = 0
ISD = 120 A, VDD = 48 V
di/dt = 100 A/µs,
Tj = 150 °C
(see Figure 15)
-
-
-
-
120 A
480 A
1.1 V
55.6 ns
116 nC
3.8 A
1. Current limited by package.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Doc ID 17467 Rev 5
5/14

5 Page





STI260N6F6 arduino
STI260N6F6, STP260N6F6
Table 9. TO-220 type A mechanical data
Dim.
A
b
b1
c
D
D1
E
e
e1
F
H1
J1
L
L1
L20
L30
P
Q
Min.
4.40
0.61
1.14
0.48
15.25
10
2.40
4.95
1.23
6.20
2.40
13
3.50
3.75
2.65
mm
Typ.
1.27
16.40
28.90
Package mechanical data
Max.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
3.85
2.95
Doc ID 17467 Rev 5
11/14

11 Page







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