|
|
PDF STW40N60M2 Data sheet ( Hoja de datos )
| Número de pieza | STW40N60M2 | |
| Descripción | N-CHANNEL MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de STW40N60M2 (archivo pdf) en la parte inferior de esta página. Total 21 Páginas | ||
|
No Preview Available !
STB40N60M2, STP40N60M2,
STW40N60M2
N-channel 600 V, 0.078 Ω typ., 34 A MDmesh II Plus™ low Qg
2
Power MOSFETs in D PAK, TO-220 and TO-247 packages
Datasheet − production data
TAB
2
3
1
D2PAK
TAB
3
2
1
TO-220
3
2
1
TO-247
Features
Order codes VDS @ TJmax RDS(on) max ID
STB40N60M2
STP40N60M2
650 V
0.088 Ω 34 A
STW40N60M2
• Extremely low gate charge
• Lower RDS(on) x area vs previous generation
• Low gate input resistance
• 100% avalanche tested
• Zener-protected
Figure 1. Internal schematic diagram
' 7$%
Applications
• Switching applications
• LLC converters, resonant converters
Description
*
6
AM01476v1
These devices are N-channel Power MOSFETs
developed using a new generation of MDmesh™
technology: MDmesh II Plus™ low Qg. These
revolutionary Power MOSFETs associate a
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. They are therefore suitable for the
most demanding high efficiency converters.
Order codes
STB40N60M2
STP40N60M2
STW40N60M2
Table 1. Device summary
Marking
Package
2
D PAK
40N60M2
TO-220
TO-247
Packaging
Tape and reel
Tube
May 2014
This is information on a product in full production.
DocID024932 Rev 3
1/21
www.st.com
1 page  
STB40N60M2, STP40N60M2, STW40N60M2
Electrical characteristics
Symbol
Table 8. Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
(1)
ISDM
(2)
VSD
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 34 A, VGS = 0
- 34
A
- 136
A
- 1.6 V
trr Reverse recovery time
- 440
Qrr Reverse recovery charge
ISD = 34 A, di/dt = 100 A/μs
VDD = 60 V (see Figure 21)
-
8.2
IRRM Reverse recovery current
- 37
ns
μC
A
trr Reverse recovery time
- 568
ISD = 34 A, di/dt = 100 A/μs
Qrr
IRRM
Reverse recovery charge
Reverse recovery current
VDD = 60 V, Tj = 150 °C
(see Figure 21)
- 11.5
- 40.5
ns
μC
A
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%
DocID024932 Rev 3
5/21
21
5 Page 
STB40N60M2, STP40N60M2, STW40N60M2
Package mechanical data
4.1 D2PAK, STB40N60M2
Figure 22. D²PAK (TO-263) drawing
0079457_T
DocID024932 Rev 3
11/21
21
11 Page | ||
| Páginas | Total 21 Páginas | |
| PDF Descargar | [ Datasheet STW40N60M2.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| STW40N60M2 | N-CHANNEL MOSFET | STMicroelectronics |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |