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PDF STGW40S120DF3 Data sheet ( Hoja de datos )
| Número de pieza | STGW40S120DF3 | |
| Descripción | Trench gate field-stop IGBT | |
| Fabricantes | STMicroelectronics | |
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STGW40S120DF3,
STGWA40S120DF3
Trench gate field-stop IGBT, S series
1200 V, 40 A low drop
Datasheet - production data
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Figure 1. Internal schematic diagram
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Features
• 10 µs of short-circuit withstand time
• VCE(sat) = 1.65 V (typ.) @ IC = 40 A
• Tight parameter distribution
• Safer paralleling
• Low thermal resistance
• Soft and fast recovery antiparallel diode
Applications
• Industrial drives
• UPS
• Solar
• Welding
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Description
This device is an IGBT developed using an
advanced proprietary trench gate field-stop
structure. The device is part of the S series of
1200 V IGBTs which is tailored to maximize
efficiency of low frequency industrial systems.
Furthermore, a positive VCE(sat) temperature
coefficient and tight parameter distribution result
in safer paralleling operation.
Order code
STGW40S120DF3
STGWA40S120DF3
Table 1. Device summary
Marking
Package
G40S120DF3
TO-247
G40S120DF3
TO-247 long leads
Packing
Tube
Tube
December 2014
This is information on a product in full production.
DocID026373 Rev 2
1/18
www.st.com
1 page  
STGW40S120DF3, STGWA40S120DF3
Electrical characteristics
Table 6. IGBT switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
td(on) Turn-on delay time
- 35 - ns
tr Current rise time
- 15 - ns
(di/dt)on
td(off)
tf
Eon(1)
Eoff(2)
Turn-on current slope
Turn-off delay time
Current fall time
Turn-on switching losses
Turn-off switching losses
VCE = 600 V, IC = 40 A,
VGE = 15 V, RG= 15 Ω
(see Figure 29)
- 2100 - A/µs
- 148 - ns
- 264 -
ns
- 1.433 - mJ
- 3.83 - mJ
Ets Total switching losses
- 5.26 - mJ
td(on) Turn-on delay time
- 32 - ns
tr Current rise time
- 18 - ns
(di/dt)on
td(off)
tf
Eon(1)
Eoff(2)
Turn-on current slope
Turn-off delay time
Current fall time
Turn-on switching losses
Turn-off switching losses
VCE = 600 V, IC = 40 A,
RG = 15 Ω, VGE = 15 V,
TJ = 175 °C, (see Figure 29)
- 1800 - A/µs
- 154 - ns
- 4.46 -
ns
- 2.9 - mJ
- 5.6 - mJ
Ets Total switching losses
- 8.5 - mJ
tsc
Short-circuit withstand time
VCC ≤ 600 V, VGE= 15 V,
TJstart ≤ 150 °C, VP < 1200 V
10
- µs
1. Energy losses include reverse recovery of the diode.
2. Turn-off losses also include the tail of the collector current.
Table 7. Diode switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
trr
Qrr
Irrm
dlrr/ /dt
Err
trr
Qrr
Irrm
dIrr/ /dt
Err
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Peak rate of fall of reverse
recovery current during tb
Reverse recovery energy
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Peak rate of fall of reverse
recovery current during tb
Reverse recovery energy
IF = 40 A, VR = 600 V,
VGE = 15 V,
di/dt = 1000 A/µs,
(see Figure 29)
IF = 40 A, VR = 600 V,
VGE = 15 V, TJ = 175 °C,
di/dt = 1000 A/µs,
(see Figure 29)
- 355 -
- 2575 -
- 25 -
ns
nC
A
- 1110 - A/µs
- 1.12 -
- 667 -
- 8500 -
- 37 -
mJ
ns
nC
A
- 450 - A/µs
- 3.9 - mJ
DocID026373 Rev 2
5/18
18
5 Page 
STGW40S120DF3, STGWA40S120DF3
Electrical characteristics
Figure 27. Thermal impedance for IGBT
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Figure 28. Thermal impedance for diode
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DocID026373 Rev 2
11/18
18
11 Page | ||
| Páginas | Total 18 Páginas | |
| PDF Descargar | [ Datasheet STGW40S120DF3.PDF ] | |
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