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PDF SPW47N65C3 Data sheet ( Hoja de datos )
| Número de pieza | SPW47N65C3 | |
| Descripción | Power Transistor | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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CoolMOSTM Power Transistor
Features
• Worldwide best R ds,on in TO247
• Low gate charge
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
Product Summary
V DS
R DS(on),max
Q g,typ
SPW47N65C3
650 V
0.07 Ω
255 nC
PG-TO247-3-1
Type
SPW47N65C3
Package
PG-TO247-3-1
Marking
47N65C3
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current2)
Avalanche energy, single pulse
ID
I D,pulse
E AS
T C=25 °C
T C=100 °C
T C=25 °C
I D=3.5 A, V DD=50 V
Avalanche
energy,
repetitive
t
2),3)
AR
E AR
I D=7 A, V DD=50 V
Avalanche
current,
repetitive
t
2),3)
AR
I AR
MOSFET dv /dt ruggedness
Gate source voltage
dv /dt
V GS
V DS=0...480 V
static
AC (f >1 Hz)
Power dissipation
Operating and storage temperature
Mounting torque
P tot T C=25 °C
T j, T stg
M3 and M3.5 screws
Value
47
30
141
1800
1
7
50
±20
±30
415
-55 ... 150
60
Unit
A
mJ
A
V/ns
V
W
°C
Ncm
Rev. 1.2
page 1
2008-02-12
Please note the new package dimensions arccording to PCN 2009-134-A
1 page  
5 Typ. output characteristics
I D=f(V DS); T j=150 °C
parameter: V GS
120
100
80
60
40
20
20 V
10 V
7V
6.5 V
6V
5.5 V
5V
4.5 V
SPW47N65C3
6 Typ. drain-source on-state resistance
R DS(on)=f(I D); T j=150 °C
parameter: V GS
20 V
0.7 6.5 V
6V
5.5 V
0.5
5V
4.5 V
4V
0.3
0
0 5 10 15
V DS [V]
7 Drain-source on-state resistance
R DS(on)=f(T j); I D=30 A; V GS=10 V
20
0.2
0.16
0.1
25 0
40 80
I D [A]
8 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
200
150
120 160
25°C
0.12
0.08
98 %
typ
100
150°C
50
0.04
0
-50
0 50 100
T j [°C]
150
0
0 2 4 6 8 10
V GS [V]
Rev. 1.2
page 5
2008-02-12
Please note the new package dimensions arccording to PCN 2009-134-A
5 Page 
Data sheet erratum
PCN 2009-134-A
New package outlines TO-247
1 New package outlines TO-247
Assembly capacity extension for CoolMOSTM technology products assembled in lead-free package
PG-TO247-3 at subcontractor ASE (Weihai) Inc., China (Changes are marked in blue.)
Figure 1 Outlines TO-247, dimensions in mm/inches
Final Data Sheet Erratum
Rev. 2.0, 2010-02-01
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet SPW47N65C3.PDF ] | |
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