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Número de pieza | Si4447DY | |
Descripción | P-Channel 40-V (D-S) MOSFET | |
Fabricantes | Vishay | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de Si4447DY (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! P-Channel 40-V (D-S) MOSFET
Si4447DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
- 40 0.054 at VGS = - 10 V
0.072 at VGS = - 4.5 V
ID (A)
- 4.5
- 3.9
Qg (Typ.)
9
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• 100 % UIS Tested
S1
S2
S3
G4
SO-8
8D
7D
6D
5D
APPLICATIONS
• CCFL Inverter
S
G
Top View
Ordering Information: Si4447DY-T1-E3 (Lead (Pb)-free)
Si4447DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Drain-Source Voltage
VDS - 40
Gate-Source Voltage
VGS
± 16
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
ID
- 4.5
- 3.6
- 3.3
- 2.7
Pulsed Drain Current
IDM - 30
Continuous Source Current (Diode Conduction)a
IS
- 1.7
- 0.9
Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
16
13
Maximum Power Dissipationa
TA = 25 °C
TA = 70 °C
PD
2
1.3
1.1
0.7
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface mounted on 1" x 1" FR4 board.
t ≤ 10 s
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
50
85
30
Maximum
62.5
110
40
Unit
°C/W
Document Number: 73662
S09-0322-Rev. B, 02-Mar-09
www.vishay.com
1
1 page TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Si4447DY
Vishay Siliconix
0.01
10-4
Single Pulse
10-3
10-2
10-1
Square Wave Pulse Duration (s)
1
Normalized Thermal Transient Impedance, Junction-to-Foot
10
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73662.
Document Number: 73662
S09-0322-Rev. B, 02-Mar-09
www.vishay.com
5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet Si4447DY.PDF ] |
Número de pieza | Descripción | Fabricantes |
Si4447DY | P-Channel 40-V (D-S) MOSFET | Vishay |
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