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PDF Si4835DDY Data sheet ( Hoja de datos )
| Número de pieza | Si4835DDY | |
| Descripción | P-Channel 30-V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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New Product
P-Channel 30-V (D-S) MOSFET
Si4835DDY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
- 30 0.018 at VGS = - 10 V
0.030 at VGS = - 4.5 V
ID (A)d
- 13
- 10
Qg (Typ.)
22 nC
S1
S2
S3
G4
SO-8
8D
7D
6D
5D
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• 100 % UIS Tested
APPLICATIONS
• Load Switches
- Notebook PCs
- Desktop PCs
S
G
Top View
Ordering Information: Si4835DDY-T1-E3 (Lead (Pb)-free)
Si4835DDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
Pulsed Drain Current
TA = 70 °C
IDM
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
TC = 25 °C
TA = 25 °C
L = 0.1 mH
IS
IAS
EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
Operating Junction and Storage Temperature Range
TA = 70 °C
TJ, Tstg
Limit
- 30
± 25
- 13
- 10.5
- 8.7a, b
- 7.7a, b
- 50
- 4.6
2.0a, b
- 20
20
5.6
3.6
2.5a, b
1.6a, b
- 55 to 150
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, c
Maximum Junction-to-Foot
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under Steady State conditions is 85 °C/W.
d. Based on TC = 25 °C.
t ≤ 10 s
Steady State
Document Number: 69953
S09-0136-Rev. B, 02-Feb-09
Symbol
RthJA
RthJF
Typical
39
18
Maximum
50
22
Unit
°C/W
www.vishay.com
1
1 page  
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
15
Si4835DDY
Vishay Siliconix
12
9
6
3
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
7.0 2.0
5.6 1.6
4.2 1.2
2.8 0.8
1.4 0.4
0.0
0
25 50 75 100 125
TC - Case Temperature (°C)
Power, Junction-to-Foot
150
0.0
0
25 50 75 100 125 150
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 69953
S09-0136-Rev. B, 02-Feb-09
www.vishay.com
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