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PDF NCE11N60T Data sheet ( Hoja de datos )

Número de pieza NCE11N60T
Descripción N-Channel Super Junction Power MOSFET
Fabricantes NCE Power Semiconductor 
Logotipo NCE Power Semiconductor Logotipo



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NCE11N60T
N-Channel Super Junction Power MOSFET
General Description
The series of devices use advanced super junction
technology and design to provide excellent RDS(ON) with low
gate charge. This super junction MOSFET fits the industry’s
AC-DC SMPS requirements for PFC, AC/DC power
conversion, and industrial power applications.
Features
New technology for high voltage device
Low on-resistance and low conduction losses
small package
Ultra Low Gate Charge cause lower driving requirements
100% Avalanche Tested
ROHS compliant
TVDS@ jmax
RDS(ON)
ID
650
380
11
V
m
A
Application
Power factor correctionPFC
Switched mode power supplies(SMPS)
Uninterruptible Power SupplyUPS
Schematic diagram
Package Marking And Ordering Information
Device
Device Package
Marking
NCE11N60T
TO-247
NCE11N60T
Table 1. Absolute Maximum Ratings (TC=25)
Parameter
Drain-Source Voltage (VGS=0V
Gate-Source Voltage (VDS=0V)
Continuous Drain Current at Tc=25°C
Continuous Drain Current at Tc=100°C
Pulsed drain current (Note 1)
Drain Source voltage slope, VDS = 480 V, ID = 11 A, Tj =
125 °C
Maximum Power Dissipation(Tc=25)
Derate above 25°C
Single pulse avalanche energy (Note2)
Avalanche current(Note 1)
Symbol
VDS
VGS
ID (DC)
ID (DC)
IDM (pluse)
dv/dt
PD
EAS
IAR
TO-247
NCE11N60T
600
±30
11
7
33
50
125
1
340
11
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
http://www.ncepower.com
Unit
V
V
A
A
A
V/ns
W
W/°C
mJ
A
v1.2

1 page




NCE11N60T pdf
NCE11N60T
Wuxi NCE Power Semiconductor Co., Ltd
Page 5
http://www.ncepower.com
v1.2

5 Page










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