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Número de pieza | HFW9N50 | |
Descripción | N-Channel MOSFET | |
Fabricantes | SemiHow | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de HFW9N50 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! June 2005
HFW9N50 / HFI9N50
500V N-Channel MOSFET
BVDSS = 500 V
RDS(on) typ = 0.58 Ω
ID = 9.0 A
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 35 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) : 0.58 Ω (Typ.) @VGS=10V
100% Avalanche Tested
D2-PAK I2-PAK
HFW9N50
HFI9N50
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25℃)
– Continuous (TC = 100℃)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
500
9.0
5.7
36
±30
360
9.0
14.7
4.5
PD
TJ, TSTG
TL
Power Dissipation (TA = 25℃) *
Power Dissipation (TC = 25℃)
- Derate above 25℃
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
3.13
147
1.18
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/℃
℃
℃
Thermal Resistance Characteristics
Symbol
RθJC
RθJA
RθJA
Junction-to-Case
Parameter
Junction-to-Ambient*
Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
--
--
--
Max.
0.85
40
62.5
Units
℃/W
◎ SEMIHOW REV.A0 June 2005
1 page Fig 12. Gate Charge Test Circuit & Waveform
Same Type
50KΩ
as DUT
12V 200nF
300nF
VGS
10V
Qg
VGS
VDS
Qgs Qgd
DUT
3mA
Charge
10V
10V
Fig 13. Resistive Switching Test Circuit & Waveforms
VDS
RG
RL
VDD
( 0.5 rated VDS )
DUT
VDS
90%
10%
Vin
td(on)
tr
t on
td(off)
tf
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
VDS
ID
RG
L
VDD
EAS =
--1--
2
LL IAS2
BVDSS
--------------------
BVDSS -- VDD
BVDSS
IAS
ID (t)
DUT
VDD
VDS (t)
t p Time
◎ SEMIHOW REV.A0 June 2005
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet HFW9N50.PDF ] |
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HFW9N50 | N-Channel MOSFET | SemiHow |
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