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PDF AM4812 Data sheet ( Hoja de datos )
| Número de pieza | AM4812 | |
| Descripción | 30V N-CHANNEL ENHANCEMENT MODE MOSFET | |
| Fabricantes | AiT Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de AM4812 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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AiT Semiconductor Inc.
www.ait-ic.com
AM4812
30V N-CHANNEL ENHANCEMENT MODE
MOSFET
DESCRIPTION
The AM4812 is the N-Channel logic enhancement
mode power field effect transistor which is
produced using high cell density. Advanced trench
technology to provide excellent RDS(ON).
This high density process is especially tailored to
minimize on-state resistance.
FEATURES
30V / 7.8A, RDS(ON) = 16mΩ (typ.)@VGS = 10V
30V / 5.8A, RDS(ON) = 22mΩ (typ.)@VGS = 4.5V
Super high density cell design for extremely low
RDS(ON)
Exceptional on-resistance and Maximum DC
current capability
Available in SOP8 Package
The AM4812 is particularly suited for low voltage
application, and low in-line power loss are needed
in a very small outline surface mount package.
The AM4812 is available in SOP8 Package.
APPLICATION
High Frequency Point-of-Load Synchronous
New working DC-DC Power System
Load Switch
ORDERING INFORMATION
N CHANNEL MOSFET
Package Type
Part Number
SOP8
AM4812M8R
M8
AM4812M8VR
Note
R: Tape & Reel
V: Green Package
AiT provides all Pb free products
Suffix “ V “ means Green Package
REV1.0
- JUN 2011 RELEASED –
-1-
1 page  
AiT Semiconductor Inc.
www.ait-ic.com
AM4812
30V N-CHANNEL ENHANCEMENT MODE
MOSFET
TYPICAL CHARACTERISTICS
1. Output Characteristics
2. Drain-Source On Resistance
3. Drain Source On Resistance
4. Gate Threshold Voltage
5. Gate Charge
6. Drain Source On Resistance
REV1.0
- JUN 2011 RELEASED –
-5-
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet AM4812.PDF ] | |
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