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PDF IXTF1N400 Data sheet ( Hoja de datos )
| Número de pieza | IXTF1N400 | |
| Descripción | High Voltage Power MOSFET | |
| Fabricantes | IXYS | |
| Logotipo |  |
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High Voltage
Power MOSFET
(Electrically Isolated Tab)
N-Channel Enhancement Mode
IXTF1N400
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
PD
TJ
TJM
Tstg
TL
TSOLD
FC
VISOL
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Force
50/60Hz, 1 Minute
Maximum Ratings
4000
4000
V
V
±20 V
±30 V
1A
3A
160 W
- 55 ... +150
150
- 55 ... +150
°C
°C
°C
300 °C
260 °C
20..120 / 4.5..27
N/lb.
4000
V~
5g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
VGS(th)
VDS = VGS, ID = 250μA
IGSS VGS = ±20V, VDS = 0V
IDSS VDS = 3.2kV, VGS = 0V
VDS = 4.0kV
VDS = 3.2kV
Note 2, TJ = 100°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ. Max.
2.0 4.0 V
±100 nA
50 μA
250 μA
250 μA
60 Ω
VDSS
ID25
RDS(on)
= 4000V
= 1A
≤ 60Ω
ISOPLUS i4-PakTM
12
5
Isolated Tab
1 = Gate
2 = Source
5 = Drain
Features
z Silicon Chip on Direct-Copper Bond
(DCB) Substrate
z Isolated Mounting Surface
z 4000V~ Electrical Isolation
z Molding Epoxies meet UL 94 V-0
Flammability Classification
Advantages
z Easy to Mount
z Space Savings
z High Power Density
Applications
z High Voltage Power Supplies
z Capacitor Discharge Applications
z Pulse Circuits
z Laser and X-Ray Generation Systems
© 2012 IXYS CORPORATION, All Rights Reserved
DS100159D(01/12)
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet IXTF1N400.PDF ] | |
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