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PDF TTC014 Data sheet ( Hoja de datos )

Número de pieza TTC014
Descripción Bipolar Transistors
Fabricantes Toshiba 
Logotipo Toshiba Logotipo



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No Preview Available ! TTC014 Hoja de datos, Descripción, Manual

Bipolar Transistors Silicon NPN Triple-Diffused Type
TTC014
1. Applications
• High-Speed High-Voltage Switching
• Switching Voltage Regulators
• High-Speed DC-DC Converters
2. Features
(1) High DC current gain
: hFE = 100 to 200 (IC = 0.1 A)
(2) High collector breakdown voltage : VCEO = 800 V, VCBO = 900 V
(3) High-speed switching
: tr = 0.2 µs (typ.), tf = 0.4 µs (typ.) (IC = 0.3 A)
3. Packaging and Internal Circuit
TTC014
1. Base
2. Collector (Heatsink)
3. Emitter
New PW-Mold
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 900 V
Collector-emitter voltage
VCES
900
Collector-emitter voltage
VCEO
800
Emitter-base voltage
VEBO
8
Collector current (DC)
(Note 1)
IC
1A
Collector current (pulsed)
(Note 1)
ICP
2
Base current
IB 0.5
Collector power dissipation
(Ta = 25 )
PC 1 W
Collector power dissipation
(Tc = 25 )
40
Junction temperature
Tj 150
Storage temperature
Tstg -55 to 150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Ensure that the junction temperature does not exceed 150 .
1 2013-11-15
Rev.1.0

1 page




TTC014 pdf
Package Dimensions
TTC014
Unit: mm
Weight: 0.36 g (typ.)
Package Name(s)
TOSHIBA: 2-7J1S
Nickname: New PW-Mold
5 2013-11-15
Rev.1.0

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